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參數(shù)資料
| 型號： | FMM75-01F |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFETTM Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM |
| 中文描述： | 75 A, 100 V, 0.021 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOPLUS, I4PAC-5 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 46K |
| 代理商： | FMM75-01F |
1 - 2
2004 IXYS All rights reserved
4
FMM 75-01F
IXYS reserves the right to change limits, test conditions and dimensions.
Preliminary data
I
D25
V
DSS
R
DSon typ.
= 18 m
= 75 A
= 100 V
HiPerFET
TM
Power MOSFET
Phaseleg Topology
in ISOPLUS i4-PAC
TM
Features
HiPerFET
TM
technology
- low R
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
- fast intrinsic reverse diode
ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
drives and power supplies
battery or fuel cell powered
automotive, industrial vehicle etc.
secondary side of mains power
supplies
MOSFET T1/T2
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C
100
V
V
GS
±20
V
I
D25
I
D90
T
C
= 25°C
T
C
= 90°C
75
50
A
A
I
F25
I
F90
(body diode) T
C
= 25°C
(body diode) T
C
= 90°C
100
60
A
A
dv/dt
V
DS
< V
; I
F
≤
300A;
di
F
/dt
≤
100A/μs; R
G
= 2
T
VJ
= 150°C
5
V/ns
E
AR
T
C
= 25°C
30
mJ
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
R
DSon
V
GS
= 10 V;
I
D
= I
D90
18
25 m
V
GSth
V
DS
= 20 V;
I
D
= 4 mA
2
4
V
I
DSS
V
DS
= V
DSS
;
V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.3 mA
0.25
mA
I
GSS
V
GS
= ±20 V; V
DS
= 0 V
200
nA
Q
g
Q
gs
Q
gd
180
35
85
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
20
60
80
60
ns
ns
ns
ns
V
F
(body diode) I
F
= 75 A;
V
GS
= 0 V
1.2
1.5
V
t
rr
(body diode) I
F
= 37.5A;
-di/dt = 100A/μs; V
DS
= 25V
300
ns
R
thJC
R
thJH
0.5 K/W
K/W
with heat transfer paste
0.93
V
GS
= 10 V; V
DS
= 0.5 V
DSS
; I
D
= I
D90
V
= 10 V; V
= 0.5 V
DSS
I
D
= I
D90
; R
G
= 2
T1
T2
3
5
4
1
2
1
5
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