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參數(shù)資料
| 型號： | FMS7G20US60S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Compact & Complex Module |
| 中文描述： | 20 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 25PM-AA, 25 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 781K |
| 代理商： | FMS7G20US60S |
3
www.fairchildsemi.com
FMS7G20US60S Rev. B1
F
Electrical Characteristics of IGBT
@ Inverter
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
B
VCES
/
T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 250
μ
A
V
GE
= 0V, I
C
= 1mA
600
--
--
V
Temperature Coeff. of Breakdown
Voltage
--
0.6
--
V/
°
C
Collector Cut-Off Current
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
--
--
250
μ
A
Gate - Emitter Leakage Current
--
--
±
100
nA
On Characteristics
V
GE(th)
V
CE(sat)
Gate - Emitter Threshold Voltage
I
C
= 20mA, V
CE
= V
GE
I
C
= 20A
,
V
GE
= 15V
5.0
6.5
8.5
V
Collector to Emitter Saturation Voltage
--
2.1
2.7
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
1277
--
pF
Output Capacitance
--
98
--
pF
Reverse Transfer Capacitance
--
21
--
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
T
sc
Turn-On Delay Time
V
CC
= 300 V, I
C
= 20A,
R
G
= 10
, V
GE
= 15V,
Inductive Load, T
C
= 25
°
C
--
65
130
ns
Rise Time
--
100
200
ns
Turn-Off Delay Time
--
80
160
ns
Fall Time
--
100
200
ns
Turn-On Switching Loss
--
0.45
--
mJ
Turn-Off Switching Loss
--
0.42
--
mJ
Turn-On Delay Time
V
CC
= 300 V, I
C
= 20A,
R
G
= 10
, V
GE
= 15V,
Inductive Load, T
C
= 125
°
C
--
70
140
ns
Rise Time
--
100
200
ns
Turn-Off Delay Time
--
110
220
ns
Fall Time
--
210
350
ns
Turn-On Switching Loss
--
0.5
--
mJ
Turn-Off Switching Loss
--
0.72
--
mJ
Short Circuit Withstand Time
V
CC
= 300 V, V
GE
= 15V
@ T
C
= 100
°
C
V
CE
= 300 V, I
C
= 20A,
V
GE
= 15V
10
--
--
μ
s
Q
g
Q
ge
Q
gc
Total Gate Charge
--
55
65
nC
Gate-Emitter Charge
--
10
15
nC
Gate-Collector Charge
--
20
30
nC
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