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參數資料
| 型號： | FMS7G20US60S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Compact & Complex Module |
| 中文描述： | 20 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 25PM-AA, 25 PIN |
| 文件頁數： | 5/10頁 |
| 文件大小： | 781K |
| 代理商： | FMS7G20US60S |
5
www.fairchildsemi.com
FMS7G20US60S Rev. B1
F
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Characteristics
Figure 2. Typical Saturation Voltage
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 4. Transient Thermal Impedance
Figure 5. Saturation Voltage vs. V
GE
Figure 6. Saturation Voltage vs. V
GE
0
2
4
6
8
0
10
20
30
40
50
60
20V
12V
15V
V
G
E
=
10V
Common Emitter
T
C
= 25
℃
C
o
u
C
]
C
ollector -
E
m
itter Voltage, V
C
E
[V]
1
10
0
10
20
30
40
50
60
Common Emitter
V
GE
= 15V
T
C
= 25
T
C
= 125
------
℃ ℃℃
℃
C
o
u
C
]
C
ollector -
E
m
itter Voltage, V
C
E
[V]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
10
Single Pulse
(Therm
al response)
FR
D
IG
B
T
T
/
℃
Rectangular Pulse Duration [sec]
-50
0
50
100
150
0
1
2
3
4
5
Common Emitter
V
GE
= 15V
20 A
40 A
I
C
= 10 A
C
o
i
C
E
C
ase Tem
perature, T
C
[
o
C
]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
℃
40A
20A
I
C
= 10A
C
o
i
C
E
(
G
ate - Em
itter Voltage, V
G
E
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
℃
40A
20A
I
C
= 10A
C
o
i
C
E
(
G
ate - Em
itter Voltage, V
G
E
[V]
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