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參數資料
| 型號： | FMS7G20US60S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Compact & Complex Module |
| 中文描述： | 20 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 25PM-AA, 25 PIN |
| 文件頁數： | 6/10頁 |
| 文件大?。?/td> | 781K |
| 代理商： | FMS7G20US60S |
6
www.fairchildsemi.com
FMS7G20US60S Rev. B1
F
Typical Performance Characteristics
(Continued)
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs. Gate
Resistance
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
10
20
30
40
50
60
70
80
90
100
100
1000
Common Emitter
V
CC
= 300V, V
GE
= ± 15V
I
C
= 20A
T
C
= 25
℃ ℃℃
T
C
= 125
------
℃
Ton
Tr
S
i
e
G
ate R
esistance, R
g[
]
0.1
1
10
0
300
600
900
1200
1500
1800
2100
2400
2700
3000
C
oes
C
res
C
ies
Common Emitter
V
GE
= 0 V, f = 1 MHz
T
C
= 25
o
C
C
a
C
ollector - Em
itter Voltage, V
C
E
[V]
10
20
30
40
50
60
70
80
90
100
100
1000
Common Emitter
V
CC
= 300V, V
GE
= ± 15V
I
C
= 20A
T
C
= 25
℃ ℃℃
T
C
= 125
------
℃
Eoff
Eoff
Eon
G
ate R
esistance, R
g[
]
S
i
10
20
30
40
50
60
70
g[
]
80
90
100
100
1000
Common Emitter
V
= 300V, V
GE
= ± 15V
I
C
= 20A
T
C
= 25
℃ ℃℃
T
C
= 125
------
℃
Toff
Tf
G
ate R
esistance, R
S
i
e
10
15
20
25
30
35
40
10
100
1000
Common Emitter
V
GE
= ± 15V, R
G
= 10
T
C
= 25
℃ ℃℃
T
C
= 125
------
℃
Toff
Tf
S
i
e
C
ollector C
urrent, I
C
[A
]
10
15
20
25
30
35
40
100
1000
Common Emitter
V
GE
= ± 15V, R
G
= 10
T
C
= 25
℃ ℃℃
T
C
= 125
------
℃
Ton
Tr
S
i
e
C
ollector C
urrent, I
C
[A
]
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