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參數(shù)資料
| 型號(hào)： | FP25R12KE3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT-Module |
| 中文描述： | 40 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-24 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 155K |
| 代理商： | FP25R12KE3 |
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP25R12KE3
Vorlufige Daten
Preliminary data
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
V
ISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Durchlaspannung
forward voltage
min.
typ.
max.
T
vj
= 150°C, I
F
= 25 A
V
F
-
1,05
-
V
Schleusenspannung
threshold voltage
T
vj
= 150°C
V
(TO)
-
-
0,8
V
Ersatzwiderstand
slope resistance
T
vj
= 150°C
r
T
-
-
10,5
m
Sperrstrom
reverse current
T
vj
= 150°C, V
R
= 1600 V
I
R
-
2
-
mA
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
T
C
= 25°C
R
AA'+CC'
-
5
-
m
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
min.
-
-
typ.
1,7
2
max.
2,2
-
V
GE
= 15V, T
vj
= 25°C, I
C
=
V
GE
= 15V, T
vj
= 125°C, I
C
=
25 A
25 A
V
CE sat
V
V
Gate-Schwellenspannung
gate threshold voltage
V
CE
= V
GE
, T
vj
= 25°C, I
C
=
1,0 mA
V
GE(TO)
5,0
5,8
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz, T
vj
= 25°C
V
CE
= 25 V, V
GE
= 0 V
C
ies
-
1,8
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut off current
Gate-Emitter Reststrom V
gate-emitter leakage current
V
GE
= 0V, T
vj
= 25°C, V
CE
=
1200 V
I
CES
-
-
5
mA
CE
= 0V, V
GE
=20V, T
vj
=25°C
I
GES
-
-
400
nA
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
I
C
= I
Nenn
, V
CC
= 600 V
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
= 600 V
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
= 600 V
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
L
S
= 45 nH
I
C
= I
Nenn
, V
CC
= 600 V
V
GE
= ±15V, T
vj
= 125°C, R
G
=
L
S
= 45 nH
t
P
≤
10μs, V
GE
≤
15V, R
G
=
T
vj
≤
125°C, V
CC
=
36 Ohm
36 Ohm
t
d,on
-
-
85
90
-
-
ns
ns
ns
ns
ns
ns
ns
ns
Anstiegszeit (induktive Last)
rise time (inductive load)
36 Ohm
36 Ohm
t
r
-
-
30
45
-
-
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
36 Ohm
36 Ohm
600 V
36 Ohm
36 Ohm
600 V
36 Ohm
t
d,off
-
-
420
520
-
-
Fallzeit (induktive Last)
fall time (inductive load)
t
f
-
-
65
90
-
-
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
E
on
-
3,5
-
mWs
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
36 Ohm
E
off
-
2,5
-
mWs
Kurzschluverhalten
SC Data
36 Ohm
720 V
I
SC
-
100
-
A
2(11)
DB-PIM-IGBT3_1.xls
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| FP25R12KE3V1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Module |
| FP25R12KS4C | 功能描述:IGBT 晶體管 1200V 25A PIM RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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| FP25R12KT3 | 功能描述:IGBT 模塊 N-CH 1.2KV 40A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FP25R12KT4 | 功能描述:IGBT 模塊 IGBT 1200V 25A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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