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參數(shù)資料
| 型號(hào)： | FP25R12KE3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT-Module |
| 中文描述： | 40 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-24 |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大小： | 155K |
| 代理商： | FP25R12KE3 |
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP25R12KE3
Vorlufige Daten
Preliminary data
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min.
typ.
max.
Modulinduktivitt
stray inductance module
L
σ
CE
-
-
100
nH
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
T
C
= 25°C
R
CC'+EE'
-
7
-
m
Diode Wechselrichter/ Diode Inverter
Durchlaspannung
forward voltage
min.
-
-
typ.
1,65
1,65
max.
2,2
-
V
GE
= 0V, T
vj
= 25°C, I
F
=
V
GE
= 0V, T
vj
= 125°C, I
F
=
I
F
=I
Nenn
, - di
F
/dt =
V
GE
= -10V, T
vj
= 25°C, V
R
=
V
GE
= -10V, T
vj
= 125°C, V
R
=
I
F
=I
Nenn
, - di
F
/dt =
V
GE
= -10V, T
vj
= 25°C, V
R
=
V
GE
= -10V, T
vj
= 125°C, V
R
=
I
F
=I
Nenn
, - di
F
/dt =
V
GE
= -10V, T
vj
= 25°C, V
R
=
V
GE
= -10V, T
vj
= 125°C, V
R
=
25 A
25 A
700 A/μs
600 V
600 V
700 A/μs
600 V
600 V
700 A/μs
600 V
600 V
V
F
V
V
Rückstromspitze
peak reverse recovery current
I
RM
-
-
26
24
-
-
A
A
Sperrverzgerungsladung
recovered charge
Q
r
-
-
2,8
5
-
-
μAs
μAs
Abschaltenergie pro Puls
reverse recovery energy
E
RQ
-
-
0,9
1,8
typ.
1,7
2
-
-
mWs
mWs
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
min.
-
-
max.
2,2
-
V
GE
= 15V, T
vj
= 25°C, I
C
=
V
GE
= 15V, T
vj
= 125°C, I
C
=
15 A
15 A
V
CE sat
V
V
Gate-Schwellenspannung
gate threshold voltage
V
CE
= V
GE
, T
vj
= 25°C, I
C
=
0,5 mA
V
GE(TO)
5,0
5,8
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz, T
vj
= 25°C
V
CE
= 25 V, V
GE
= 0 V
C
ies
-
1,1
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut off current
Gate-Emitter Reststrom
gate-emitter leakage current
V
GE
= 0V, T
vj
= 25°C, V
CE
=
1200 V
I
CES
-
5,0
-
mA
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
-
400
nA
Schaltverluste und -bedingungen
Switching losses and conditions
Diode Brems-Chopper/ Diode Brake-Chopper
Durchlaspannung
forward voltage
min.
-
-
typ.
2,05
2,2
max.
2,5
-
T
vj
= 25°C, I
F
=
T
vj
= 125°C, I
F
=
siehe Wechselrichter in Dbl FB10R12KE3
see inverter in datasheet FB10R12KE3
15 A
15 A
V
F
V
V
Schaltverluste und -bedingungen
Switching losses and conditions
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
min.
typ.
max.
T
C
= 25°C
R
25
-
5
-
k
Abweichung von R
100
deviation of R
100
T
C
= 100°C, R
100
= 493
R/R
-5
5
%
Verlustleistung
power dissipation
T
C
= 25°C
P
25
20
mW
B-Wert
B-value
R
2
= R
1
exp [B(1/T
2
- 1/T
1
)]
B
25/50
3375
K
siehe Wechselrichter in Dbl FP15R12KE3
see inverter in datasheet FP15R12KE3
3(11)
DB-PIM-IGBT3_1.xls
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FP25R12KE3V1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Module |
| FP25R12KS4C | 功能描述:IGBT 晶體管 1200V 25A PIM RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FP25R12KS4CV2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Module |
| FP25R12KT3 | 功能描述:IGBT 模塊 N-CH 1.2KV 40A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FP25R12KT4 | 功能描述:IGBT 模塊 IGBT 1200V 25A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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