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參數資料
| 型號： | FPN660 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP Low Saturation Transistor |
| 中文描述： | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AE |
| 封裝： | TO-226, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 57K |
| 代理商： | FPN660 |
2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
F
Absolute Maximum Ratings
T
A
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
T
J
, T
STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150
°
C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltage (V) and currents (A) are negative polarity for PNP transistors
Electrical Characteristics
T
A
=25
°
C unless otherwise noted
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
NOTE:
All voltage (V) and currents (A) are negative polarity for PNP transistors.
FPN660
60
80
5
3
-55 ~ +150
FPN660A
60
60
5
3
-55 ~ +150
Units
V
V
V
A
°
C
- Continuous
Symbol
Off Characteristics
BV
CEO
BV
CBO
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
I
C
= 10mA, I
B
= 0
I
E
= 100
μ
A, I
E
= 0 FPN660
FPN660A
I
E
= 100
μ
A, I
C
= 0
V
CB
= 30V, I
E
= 0
V
CB
= 30V, I
E
= 0, T
A
= 100
°
C
V
EB
= 4.0V, I
C
= 0
55
80
60
5.0
V
V
V
V
nA
μ
A
nA
BV
EBO
I
CBO
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
100
10
100
I
EBO
On Characteristics *
h
FE
Emitter-Base Cutoff Current
DC Current Gain
I
C
= 100mA, V
CE
= 2.0V
I
C
= 500mA, V
CE
= 2.0V FPN660
FPN660A
I
C
= 1.0A, V
CE
= 2.0V
I
C
= 2.0A, V
CE
= 2.0V
I
C
= 1.0A, I
B
= 100mA
I
C
= 2.0A, I
B
= 200mA FPN660
FPN660A
I
C
= 1.0A, I
B
= 100mA
I
C
= 1.0A, V
CE
= 2.0V
70
100
250
80
40
300
550
V
CE
(sat)
Collector-Emitter Saturation Voltage
300
450
400
1.25
1.0
mV
mV
mV
V
V
V
BE
(sat)
V
BE
(on)
Small Signal Characteristics
C
obo
Output Capacitance
f
T
Transition Frequency
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
V
CB
= 10V, I
E
= 0, f = 1MHz
I
C
= 100mA, V
CE
= 5.0V,
f = 100MHz
45
pF
MHz
75
FPN660/FPN660A
PNP Low Saturation Transistor
These devices are designed for high current gain and low saturation
voltage with collector currents up to 3.0A continuous.
Sourced from process PA.
CBE
TO-226
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| FPN660_Q | 功能描述:兩極晶體管 - BJT PNP Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FPN660A | 功能描述:兩極晶體管 - BJT PNP Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FPN660A_D26Z | 功能描述:兩極晶體管 - BJT PNP Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FPN660A_D27Z | 功能描述:兩極晶體管 - BJT PNP Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FPN660A_D75Z | 功能描述:兩極晶體管 - BJT PNP Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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