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參數資料
| 型號： | FQB2N80 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 800V N-Channel MOSFET |
| 中文描述： | 2.4 A, 800 V, 6.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 封裝： | D2PAK-3 |
| 文件頁數： | 2/9頁 |
| 文件大小： | 659K |
| 代理商： | FQB2N80 |
Rev. A, September 2000
F
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
2000 Fairchild Semiconductor International
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 59mH, I
= 1.8A, V
DD
= 50V, R
G
= 25
,
Starting T
= 25°C
3. I
≤
2.4A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
800
--
--
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25°C
--
0.9
--
V/°C
V
DS
= 800 V, V
GS
= 0 V
V
DS
= 640 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
10
100
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
3.0
--
5.0
V
V
GS
= 10 V, I
D
= 0.9 A
--
4.9
6.3
V
DS
= 50 V, I
D
= 0.9 A
--
2.4
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
425
45
5.5
550
60
7.0
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 400 V, I
D
= 2.4 A,
R
G
= 25
--
--
--
--
--
--
--
12
30
25
28
12
2.6
6.0
35
70
60
65
15
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 640 V, I
D
= 2.4 A,
V
GS
= 10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
1.8
7.2
1.4
--
--
A
A
V
ns
μ
C
V
GS
= 0 V, I
S
= 1.8 A
V
GS
= 0 V, I
S
= 2.4 A,
dI
F
/ dt = 100 A/
μ
s
480
2.0
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