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參數資料
| 型號： | FQB2N80 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 800V N-Channel MOSFET |
| 中文描述： | 2.4 A, 800 V, 6.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 封裝： | D2PAK-3 |
| 文件頁數： | 9/9頁 |
| 文件大小： | 659K |
| 代理商： | FQB2N80 |
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Definition of Terms
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
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This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
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This datasheet contains final specifications. Fairchild
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The datasheet is printed for reference information only.
Rev. F1
VCX
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FQB2N80TM | 功能描述:MOSFET 800V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQB2N90 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:900V N-Channel MOSFET |
| FQB2N90TM | 功能描述:MOSFET 900V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQB2NA90 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:900V N-Channel MOSFET |
| FQB2NA90TM | 功能描述:MOSFET 900V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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