欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FQB6N60C
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 600V N-Channel MOSFET
中文描述: 5.5 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D2PAK-3
文件頁數: 1/9頁
文件大小: 680K
代理商: FQB6N60C
2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
F
QF E T
FQB6N60C / FQI6N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
5.5A, 600V, R
DS(on)
= 2.0
@V
GS
= 10 V
Low gate charge ( typical 16 nC)
Low Crss ( typical 7 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
Symbol
V
DSS
I
D
Parameter
FQB6N60C / FQI6N60C
600
5.5
3.3
22
±
30
300
5.5
12.5
4.5
125
1.0
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
5.5 *
3.3 *
22 *
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
-
-
-
Max
1.0
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
!
!
!
S
!
!
!
D
G
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
相關PDF資料
PDF描述
FQI6N60C 600V N-Channel MOSFET
FQB6N60 600V N-Channel MOSFET(漏源電壓為600V的N溝道增強型MOSFET)
FQI6N60 600V N-Channel MOSFET(漏源電壓為600V的N溝道增強型MOSFET)
FQB6N70 700V N-Channel MOSFET
FQI6N70 700V N-Channel MOSFET
相關代理商/技術參數
參數描述
FQB6N60CTM 功能描述:MOSFET N-CH/600V/6A/QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQB6N60TM 功能描述:MOSFET 600V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQB6N70 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:700V N-Channel MOSFET
FQB6N70TM 功能描述:MOSFET 700V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQB6N80 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:800V N-Channel MOSFET
主站蜘蛛池模板: 巴彦淖尔市| 化隆| 朔州市| 历史| 汪清县| 二连浩特市| 榆中县| 乌鲁木齐县| 合作市| 尉氏县| 普格县| 界首市| 秀山| 南江县| 枞阳县| 绥德县| 绵阳市| 安平县| 什邡市| 嘉义县| 芮城县| 耒阳市| 白银市| 长岭县| 凤阳县| 清流县| 武汉市| 梁平县| 龙山县| 乐陵市| 凭祥市| 和平县| 平武县| 安福县| 新安县| 泰来县| 水富县| 兴宁市| 尤溪县| 明星| 姚安县|