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參數(shù)資料
| 型號(hào)： | FQG4902 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 250V Dual N & P-Channel MOSFET |
| 中文描述： | 0.54 A, 250 V, 2 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DIP-8 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大小： | 1112K |
| 代理商： | FQG4902 |
Rev. A1, April 2002
F
2002 Fairchild Semiconductor Corporation
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
μ
A
V
GS
= 0 V, I
D
= -250
μ
A
I
D
= 250
μ
A,
Referenced to 25°C
I
D
= -250
μ
A,
Referenced to 25°C
V
DS
= 250 V, V
GS
= 0 V
V
DS
= 200 V, T
A
= 125°C
V
DS
= -250 V, V
GS
= 0 V
V
DS
= -200 V, T
A
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
N-Ch
P-Ch
250
-250
--
--
--
--
V
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
N-Ch
--
0.24
--
V/°C
P-Ch
--
-0.2
--
V/°C
I
DSS
Zero Gate Voltage Drain Current
N-Ch
--
--
--
--
--
--
--
--
--
--
--
--
10
100
-10
-100
100
-100
μ
A
μ
A
μ
A
μ
A
nA
nA
P-Ch
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
All
All
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= -250
μ
A
V
GS
= 10 V, I
D
= 0.27 A
V
GS
= -10 V, I
D
= -0.27 A
V
DS
= 40 V, I
D
= 0.27 A
V
DS
= -40 V, I
D
= -0.27 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
2.0
-2.0
--
--
--
--
--
--
4.0
-4.0
2.0
2.0
--
--
V
V
S
S
R
DS(on)
Static Drain-Source On-Resistance
1.1
1.5
1.3
1.1
g
FS
Forward Transconductance
Dynamic Characteristics
C
iss
Input Capacitance
N-Channel
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
--
--
--
--
--
--
195
345
40
65
7
11
250
445
55
85
9.5
14.5
pF
pF
pF
pF
pF
pF
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
Turn-On Delay Time
N-Channel
V
DD
= 125 V, I
D
= 0.54 A,
R
G
= 25
P-Channel
V
DD
= -125 V, I
D
= -0.54 A,
R
G
= 25
(Note 3,4)
N-Channel
V
DS
= 200 V, I
D
= 0.54 A,
V
GS
= 10 V
P-Channel
V
DS
= -200 V, I
D
= -0.54 A,
V
GS
= -10 V
(Note 3,4)
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
--
--
--
--
--
--
--
--
--
--
--
--
--
--
5.5
8.0
17
19
29
44
23
33
6.0
12.0
1.1
2.2
2.7
5.3
20
25
45
50
70
100
55
75
7.8
15.6
--
--
--
--
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
nC
nC
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
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