- 您現在的位置：買賣IC網 > PDF目錄375883 > FQG4904 (FAIRCHILD SEMICONDUCTOR CORP) 400V Dual N & P-Channel MOSFET PDF資料下載
參數資料
| 型號： | FQG4904 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 400V Dual N & P-Channel MOSFET |
| 中文描述： | 0.46 A, 400 V, 3 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DIP-8 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 1158K |
| 代理商： | FQG4904 |
2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002
F
QF E T
TM
FQG4904
400V Dual N & P-Channel MOSFET
General Description
These dual N and P-channel enhancement mode power
field effect transistors are produced using Fairchild’s
proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on half bridge.
Features
N-Channel 0.46A, 400V, R
DS(on)
= 3.0
@ V
GS
= 10 V
P-Channel -0.46A, -400V, R
DS(on)
= 3.0
@ V
GS
= -10 V
Low gate charge ( typical N-Channel 7.6 nC)
( typical P-Channel 20.0 nC)
Fast switching
Improved dv/dt capability
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
N-Channel
400
0.46
0.29
3.68
P-Channel
-400
-0.46
-0.29
-3.68
Units
V
A
A
A
V
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
A
= 25°C)
- Continuous (T
A
= 100°C)
- Pulsed
I
DM
V
GSS
dv/dt
P
D
Drain Curent
Gate-Source Voltage
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)
Operating and Storage Temperature Range
(Note 1)
±
30
(Note 2)
4.5
-4.5
1.6
0.013
- Derate above 25°C
T
J
, T
STG
-55 to +150
Symbol
R
θ
JA
Parameter
Typ
--
Max
78
Units
°C
/
W
Thermal Resistance, Junction-to-Ambient
(Note 5a)
4
3
2
1
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
Pin #1
8-DIP
相關PDF資料 |
PDF描述 |
|---|---|
| FQH140N10 | 100V N-Channel MOSFET |
| FQH18N50V2 | 500V N-Channel MOSFET |
| FQH35N40 | 400V N-Channel MOSFET |
| FQH44N10 | 100V N-Channel MOSFET |
| FQH70N10 | FQH70N10 100V N-Channel MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FQG4904TU | 功能描述:MOSFET 400V Dual N & P-Ch QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQH140N10 | 功能描述:MOSFET 100V N-Channel Q-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQH18N50V2 | 功能描述:MOSFET 500V N-Channel Adv Q-FET V2 Ser RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQH35N40 | 功能描述:MOSFET 400V NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQH44N10 | 功能描述:MOSFET N-CH/100V/48A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。