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參數資料
| 型號： | FQG4904 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 400V Dual N & P-Channel MOSFET |
| 中文描述： | 0.46 A, 400 V, 3 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DIP-8 |
| 文件頁數： | 3/12頁 |
| 文件大小： | 1158K |
| 代理商： | FQG4904 |
Rev. A1, April 2002
F
2002 Fairchild Semiconductor Corporation
Electrical Characteristics
(Continued)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. I
≤
0.46A, di/dt
≤
200A/
μ
s, V
≤
BV
Starting T
J
= 25°C
3. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
4. Essentially independent of operating temperature
5. R
is the sum of the junction-to-case and case-to-ambient thermal resistance. R
is determined by the user’s board design
Maximum R
using the different board layouts on 3”x4.5” FR-4 PCB in a still air environment :
a. 78°C/W when mounted without any pad copper
b. 60°C/W when mounted on a 4.5 in
pad of 2oz copper. In such an environment, the power dissipation can be enhanced up to 2.1W
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.46
-0.46
3.68
-3.68
1.4
-5.0
--
--
--
--
A
A
A
A
V
V
ns
nC
ns
nC
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.46 A
V
GS
= 0 V, I
S
= -0.46 A
V
GS
= 0 V, I
S
= 0.46 A,
dI
F
/ dt = 100 A/
μ
s
(Note 3)
V
GS
= 0 V, I
S
= -0.46 A,
dI
F
/ dt = 100 A/
μ
s
(Note 3)
t
rr
Q
rr
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
N-Ch
104
248
117
497
P-Ch
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相關代理商/技術參數 |
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| FQG4904TU | 功能描述:MOSFET 400V Dual N & P-Ch QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQH140N10 | 功能描述:MOSFET 100V N-Channel Q-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQH18N50V2 | 功能描述:MOSFET 500V N-Channel Adv Q-FET V2 Ser RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQH35N40 | 功能描述:MOSFET 400V NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQH44N10 | 功能描述:MOSFET N-CH/100V/48A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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