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參數資料
| 型號： | FQP10N50CF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 500V N-Channel MOSFET |
| 中文描述： | 10 A, 500 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 2/10頁 |
| 文件大小： | 996K |
| 代理商： | FQP10N50CF |
2
www.fairchildsemi.com
FQP10N50CF / FQPF10N50CF Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 7mH, I
AS
= 10A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25°C
3. I
SD
≤
10A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQP10N50CF
FQP10N50CF
TO-220
-
-
50
FQPF10N50CF
FQPF10N50CF
TO-220F
-
-
50
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
μ
A, T
J
= 25
°
C
500
--
--
V
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, Referenced to 25
°
C
--
0.5
--
V/
°
C
Zero Gate Voltage Drain Current
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, T
C
= 125
°
C
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
--
--
10
μ
A
--
--
100
μ
A
I
GSSF
I
GSSR
On Characteristics
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
V
GS(th)
R
DS(on)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
--
4.0
V
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 5A
--
0.5
0.61
g
FS
Dynamic Characteristics
Forward Transconductance
V
DS
= 40V, I
D
= 5A
(Note 4)
--
15
--
S
C
iss
C
oss
C
rss
Switching Characteristics
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
1610
2096
pF
Output Capacitance
--
177
230
pF
Reverse Transfer Capacitance
--
16
24
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
Turn-On Delay Time
V
DD
= 250V, I
D
= 10A
R
G
= 25
(Note 4, 5)
--
29
67
ns
Turn-On Rise Time
--
80
170
ns
Turn-Off Delay Time
--
141
290
ns
Turn-Off Fall Time
--
80
165
ns
Total Gate Charge
V
DS
= 400V, I
D
= 10A
V
GS
= 10V
(Note 4, 5)
--
43
56
nC
Gate-Source Charge
--
7.5
--
nC
Gate-Drain Charge
--
18.5
--
nC
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
10
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
40
A
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 10A
V
GS
= 0V, I
S
= 10A
dI
F
/dt =100A/
μ
s
(Note 4)
--
--
1.4
V
Reverse Recovery Time
--
50
ns
Reverse Recovery Charge
--
0.1
--
μ
C
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