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參數資料
| 型號： | FQP10N60CF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 9 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/10頁 |
| 文件大小： | 944K |
| 代理商： | FQP10N60CF |
2006 Fairchild Semiconductor Corporation
FQP10N60CF / FQPF10N60CF Rev. A
1
www.fairchildsemi.com
F
February 2007
FRFET
TM
FQP10N60CF / FQPF10N60CF
600V N-Channel MOSFET
Features
9A, 600V, R
DS(on)
= 0.8
@V
GS
= 10 V
Low gate charge ( typical 44 nC)
Low Crss ( typical 18 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature.
Thermal Characteristics
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
D
G
S
Symbol
Parameter
FQP10N60CF
FQPF10N60CF
Units
V
DSS
I
D
Drain-Source Voltage
600
V
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
9.0
9.0 *
A
5.7
5.7 *
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
36
36 *
A
Gate-Source Voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
583
mJ
Avalanche Current
(Note 1)
9.0
A
Repetitive Avalanche Energy
(Note 1)
16.9
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C
= 25°C)
169
50
W
- Derate above 25°C
1.35
0.4
W/°C
T
J
, T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°C
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
300
°C
Symbol
Parameter
FQP10N60CF
FQPF10N60CF
Units
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
0.74
2.5
°C
/
W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C
/
W
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