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參數資料
| 型號： | FQP10N60CF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 9 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 2/10頁 |
| 文件大?。?/td> | 944K |
| 代理商： | FQP10N60CF |
2
www.fairchildsemi.com
FQP10N60CF / FQPF10N60CF Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 13.2mH, I
AS
= 9.0 A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25°C
3. I
SD
≤
9.0A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQP10N60CF
FQP10N60CF
TO-220
--
--
50
FQPF10N60CF
FQPF10N60CF
TO-220F
--
--
50
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
μ
A
600
--
--
V
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, Referenced to 25°C
--
0.7
--
V/°C
Zero Gate Voltage Drain Current
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
--
--
10
μ
A
--
--
100
μ
A
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
On Characteristics
V
GS(th)
R
DS(on)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
--
4.0
V
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 4.5 A
--
0.61
0.8
g
FS
Forward Transconductance
V
DS
= 40 V, I
D
= 4.5 A
(Note 4)
--
8.0
--
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
1570
2040
pF
Output Capacitance
--
166
215
pF
Reverse Transfer Capacitance
--
18
24
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
V
DD
= 300 V, I
D
= 9.0A,
R
G
= 25
(Note 4, 5)
--
23
55
ns
Turn-On Rise Time
--
69
150
ns
Turn-Off Delay Time
--
144
300
ns
Turn-Off Fall Time
--
77
165
ns
Total Gate Charge
V
DS
= 480 V, I
D
= 9.0A,
V
GS
= 10 V
(Note 4, 5)
--
44
57
nC
Gate-Source Charge
--
6.7
--
nC
Gate-Drain Charge
--
18.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
9.0
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
36
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 9.0 A
V
GS
= 0 V, I
S
= 9.0A,
dI
F
/ dt = 100 A/
μ
s
(Note 4)
--
--
1.4
V
Reverse Recovery Time
--
90
--
ns
Reverse Recovery Charge
--
0.3
--
μ
C
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