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參數資料
| 型號： | FQU3N50C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 500V N-Channel MOSFET |
| 中文描述： | 2.5 A, 500 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | IPAK-3 |
| 文件頁數： | 9/9頁 |
| 文件大小： | 1043K |
| 代理商： | FQU3N50C |
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FQD3N50C/FQU3N50C Rev. A
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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No Identification Needed
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The datasheet is printed for reference information only.
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相關PDF資料 |
PDF描述 |
|---|---|
| FQD3N60 | 600V N-Channel MOSFET |
| FQU3N60 | 600V N-Channel MOSFET |
| FQD3P20 | 200V P-Channel MOSFET |
| FQU3P20 | 200V P-Channel MOSFET |
| FQD3P50 | 500V P-Channel MOSFET(漏源電壓為-500V、漏電流為2.1A的P溝道增強型MOS場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FQU3N50CTU | 功能描述:MOSFET 500V N-Channel Adv QFET C-series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQU3N60 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
| FQU3N60CTU | 功能描述:MOSFET 600V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQU3N60TU | 功能描述:MOSFET 600V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQU3P20 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V P-Channel MOSFET |
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