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參數資料
| 型號： | FZT749 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Circular Connector; No. of Contacts:15; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:14-15 |
| 中文描述： | 3 A, 25 V, PNP, Si, POWER TRANSISTOR |
| 文件頁數： | 1/2頁 |
| 文件大小： | 87K |
| 代理商： | FZT749 |
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - NOVEMBER 1995
FEATURES
*
25 Volt V
CEO
*
3 Amp continuous current
*
Low saturation voltage
*
Excellent h
FE
specified up to 6A (pulsed).
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FZT649
FZT749
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-35
V
Collector-Emitter Voltage
V
CEO
-25
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-8
A
Continuous Collector Current
I
C
-3
A
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
I
C
=-100
μ
A
I
C
=-10mA*
I
E
=-100
μ
A
V
CB
=-30V
V
CB
=-30V,
T
amb
=100°C
V
EB
=4V
I
C
=-1A, I
B
=-100mA*
I
C
=-3A, I
B
=-300mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, V
CE
=-2V*
Breakdown Voltages
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
-35
V
-25
V
-5
V
Collector Cut-Off
Currents
-0.1
-10
μ
A
μ
A
μ
A
I
EBO
V
CE(sat)
-0.1
Saturation Voltages
-0.12
-0.40
-0.3
-0.6
V
V
V
BE(sat)
V
BE(on)
-0.9
-1.25
V
Base-Emitter
Turn-On Voltage
-0.8
-1.0
V
Static Forward Current
Transfer Ratio
h
FE
70
100
75
15
200
200
150
50
300
I
C
=-50mA, V
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
I
=-100mA, V
CE
=-5V
f=100MHz
Transition Frequency
f
T
100
160
MHz
Output Capacitance
C
obo
t
on
t
off
55
100
pF
V
CB
=-10V f=1MHz
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
Switching Times
40
ns
450
ns
*Measured under pulsed conditions. Pulse Width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT749
C
C
E
B
3 - 232
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相關代理商/技術參數 |
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|---|---|
| FZT749 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR PNP SOT-223 |
| FZT749TA | 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT749TC | 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT751 | 制造商:Zetex 功能描述:Bulk 制造商:Diodes Incorporated 功能描述:TRANSISTOR PNP SOT-223 制造商:Diodes Incorporated 功能描述:TRANSISTOR, PNP, SOT-223 制造商:Diodes Incorporated 功能描述:BIPOLAR TRANSISTOR, PNP, -60V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:140MHz; Power Dissipation Pd:2W; DC Collector Current:-3A; DC Current Gain hFE:200; No. of Pins:4 ;RoHS Compliant: Yes |
| FZT751TA | 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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