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參數資料
| 型號： | FZT758 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| 中文描述： | 0.5 A, 400 V, PNP, Si, POWER TRANSISTOR |
| 文件頁數： | 1/2頁 |
| 文件大小： | 92K |
| 代理商： | FZT758 |
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 FEBRUARY 1995
FEATURES
*
400 Volt V
CEO
*
0.5 Amp continuous current
*
Low saturation voltage
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FZT658
FZT758
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
-400
V
Collector-Emitter Voltage
-400
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-1
A
Continuous Collector Current
-500
mA
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
I
C
=-100
μ
A
Collector-Base Breakdown
Voltage
V
(BR)CBO
-400
V
Collector-Emitter
Breakdown Voltage
V
CEO(SUS)
-400
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
μ
A
Collector Cut-Off Current
I
CBO
I
CES
I
EBO
V
CE(sat)
-100
nA
V
CB
=-320V
V
CE
=-320V
V
EB
=-4V
I
C
=-20mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA*
I
C
=-100mA, I
B
=-10mA*
I
C
=-100mA, I
B
=-10mA*
Collector Cut-Off Current
-100
nA
Emitter Cut-Off Current
-100
nA
Collector-Emitter
Saturation Voltage
-0.30
-0.25
-0.50
V
V
V
Base-Emitter Saturation
Voltage
V
BE(sat)
-0.9
V
Base-Emitter Turn On Voltage
V
BE(on)
h
FE
-1.0
V
I
C
=-100mA, V
CE
=-5V*
I
C
=-1mA, V
=-5V
I
C
=-100mA, V
CE
=-5V*
I
C
=-200mA, V
CE
=-10V*
I
=-20mA, V
CE
=-20V
f=20MHz
Static Forward Current
Transfer Ratio
50
50
40
Transition Frequency
f
T
50
MHz
Output Capacitance
C
obo
t
on
t
off
20
pF
V
CB
=-20V, f=1MHz
I
C
=-100mA, V
=-100V
I
B1
=10mA, I
B2
=-20mA
Switching times
140
2000 Typical
Typical
ns
ns
* Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT758
C
C
E
B
3 - 242
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