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參數資料
| 型號： | FZT857 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR |
| 中文描述： | 3.5 A, 300 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 142K |
| 代理商： | FZT857 |
SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE)TRANSISTOR
ISSUE 4 - SEPTEMBER 1997
FEATURES
*
Up to 3.5 Amps continuous collector current, up to 5 Amp peak
*
V
CEO
= 300V
*
Very low saturation voltage
*
Excellent h
FE
specified up to 3 Amps
PARTMARKING DETAIL -
COMPLEMENTARY TYPE -
FZT857
FZT957
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
350
V
Collector-Emitter Voltage
300
V
Emitter-Base Voltage
6
V
Peak Pulse Current
5
A
Continuous Collector Current
3.5
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
3
W
-55 to +150
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches square.
FZT857
C
C
E
B
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| FZT857TC | 功能描述:兩極晶體管 - BJT NPN High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT869 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:NPN Silicon Planar High Current (High Performance) Transistor |
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