- 您現在的位置：買賣IC網 > PDF目錄370316 > GF2524 TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 30V V(BR)DSS | SO PDF資料下載
參數資料
| 型號： | GF2524 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 30V V(BR)DSS | SO |
| 中文描述： | 晶體管| MOSFET的|陣| N溝道| 30V的五（巴西）決策支持系統|蘇 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 102K |
| 代理商： | GF2524 |
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low
On-Resistance
Specially Designed for Low Voltage DC/DC
Converters
Fast Switching for High Efficiency
High temperature soldering in accordance
with CECC802/Reflow guaranteed
High efficiency, optimized for PWM.
Maximum Ratings and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
MOSFET-1
MOSFET-2
Unit
Drain-Source Voltage
V
DS
30
±
20
30
±
20
V
Gate-Source Voltage
Continuous Drain Current T
J
= 150°C
(1)
V
GS
I
D
5.8
7.8
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
(1)
I
DM
20
30
A
I
S
1.7
1.7
Maximum Power Dissipation
(1)
T
A
= 25°C
T
A
= 70°C
P
D
2
2
W
1.3
1.3
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
(1)
Thermal Resistance
T
J
, T
stg
–55 to 150
°C
R
θ
JA
62.5
62.5
°C/W
Mechanical Data
Case:
SO-8 molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
Mounting Position:
Any
Weight:
0.5g
Packaging Codes/Options:
5B/2.5K per reel, 12.5K per carton
GF2524
Asymmetric N-Channel Enhancement-Mode MOSFET
MOSFET 1:V
DS
30V
R
DS(ON)
37m
I
D
5.8A
MOSFET 2:V
DS
30V
R
DS(ON)
18m
I
D
7.8A
SO-8
6/1/00
S1
1
D1
8
D1
7
D2
6
D2
5
G1
2
S2
3
G2
4
Q1
Q2
0.245 (6.22)
Min.
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
0.165 (4.19)
0.155 (3.94)
0.05 (1.27)
0.04 (1.02)
Mounting Pad Layout
5
1
4
0.244 (6.20)
0.228 (5.79)
8
0.157 (3.99)
0.150 (3.81)
0.020 (0.51)
0.013 (0.33)
0.050 (1.27)
0.009 (0.23)
0.004 (0.10)
0.197 (5.00)
0.189 (4.80)
0.069 (1.75)
0.053 (1.35)
0.019 (0.48)
°
0
°
–
8
°
0.050(1.27)
0.016 (0.41)
0.009 (0.23)
0.007 (0.18)
Dimensions in inches
and (millimeters)
New Product
相關PDF資料 |
PDF描述 |
|---|---|
| GF2918 | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 7.8A I(D) | SO |
| GF2M303 | TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 20V V(BR)DSS | 2.3A I(D) | TSOP |
| GF3443 | TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 4.4A I(D) | TSOP |
| GF4126 | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 7.2A I(D) | SO |
| GF4410 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GF2524\5B | 功能描述:MOSFET USE 781-SI4824DY RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| GF260 | 制造商:TAITRON 制造商全稱:TAITRON Components Incorporated 功能描述:0.2A High Voltage Fast Recovery Rectifiers |
| GF265 | 制造商:ELC 功能描述:FUNCTION GENERATOR GF265 |
| GF266 | 制造商:ELC 功能描述:FUNCTION GENERATOR GF266 制造商:ELC 功能描述:FUNCTION GENERATOR, GF266 |
| GF281 | 制造商:TOCOS 制造商全稱:TOCOSAMERICA, INC. 功能描述:28mm Diameter, Single-Turn, Cermet Industrial Panel Controls |
發布緊急采購，3分鐘左右您將得到回復。