| 型號 | 廠商 | 描述 |
| gm100dy16 2 |
THYRISTOR MODULE|DOUBLER|CA|30A I(T) | |
| gm100dy20 2 |
THYRISTOR MODULE|DOUBLER|CA|30A I(T) | |
| gm100dy24 2 |
THYRISTOR MODULE|GTO|CENTER-TAPPED|CA|30A I(T) | |
| ge003 2 3 4 |
AMPLIFIER OUTPUT PHOTO IC | |
| ge010 2 3 4 |
AMPLIFIER OUTPUT PHOTO IC | |
| gem200 2 |
Industrial Control IC | |
| gem301ac257 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
RF/Baseband Circuit | |
| gem301fp144 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
RF/Baseband Circuit | |
| gem301fp160 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
RF/Baseband Circuit | |
| gem312 2 |
Controller Miscellaneous - Datasheet Reference | |
| generaldiscription(chinesever.) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
EM56/57 - Speech & Music Synthesizer - Application Note - Application Note | |
| generalwirelessinfrareddocumentation 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
GENERAL WIRELESS INFRARED DOCUMENTATION SigmaTel USB-to-Infrared FAQs (pdf. c 1.01 7/24/02) | |
| ges5305 2 3 4 |
SILICON DARLINGTON TRANSISTORS | |
| ges5306 2 3 4 |
SILICON DARLINGTON TRANSISTORS | |
| ges5306a 2 3 4 |
Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 47uF; Voltage: 50V; Case Size: 6.3x11 mm; Packaging: Tape & Ammo | |
| ges5810j1 |
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-92 | |
| ges5811j1 |
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | TO-92 | |
| ges5812j1 |
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-92 | |
| ges5813j1 |
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | TO-92 | |
| ges5814j1 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | TO-92 | |
| ges5815j1 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | TO-92 | |
| ges5816j1 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | TO-92 | |
| ges5817j1 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | TO-92 | |
| ges5818j1 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | TO-92 | |
| ges5819j1 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | TO-92 | |
| ges5820j1 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-92 | |
| ges5821j1 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-92 | |
| ges5822j1 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-92 | |
| ges5823j1 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-92 | |
| ges6010j1 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | TO-92 | |
| ges6011j1 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | TO-92 | |
| ges6012j1 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | TO-92 | |
| ges6013j1 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | TO-92 | |
| ges6014j1 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-92 | |
| ges6015j1 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-92 | |
| ges6016 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-92 | |
| ges6016j1 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-92 | |
| ges6017j1 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-92 | |
| ges6218j1 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-92 | |
| ges6219j1 |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-92 | |
| ges6220j1 |
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | TO-92 | |
| ges6221j1 |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-92 | |
| geyserville 2 3 4 5 6 7 8 9 10 11 |
Geyserville Solution for Mobile CPUs (122k) | |
| gf2208 2 3 4 5 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 13A I(D) | SO | |
| gf2301 2 3 4 |
TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 2.3A I(D) | SOT-23 | |
| gf2303a 2 3 4 |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2.5A I(D) | SOT-23 | |
| gf2304 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 2.5A I(D) | SOT-23 | |
| gf2402 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 1.14A I(D) | SOT-23 | |
| gf2524 2 3 4 5 6 |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 30V V(BR)DSS | SO | |
| gf2918 2 3 4 5 |
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 7.8A I(D) | SO |