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參數資料
| 型號： | GF2402 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 1.14A I(D) | SOT-23 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 20V的五（巴西）直| 1.14AI（四）| SOT - 23封裝 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 51K |
| 代理商： | GF2402 |
GF2402
Vishay Semiconductor
Document Number #####
26-Nov-01
www.vishay.com
1
N-Channel Enhancement-Mode MOSFET
T
RENCH
G
EN
F
ET
Maximum Ratings and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source-Voltage
V
GS
±
12
V
Continuous Drain Current
(2)
T
J
= 150°C
T
A
= 25°C
T
A
= 70°C
I
D
1.14
0.91
A
Pulsed Drain Current
(1)
I
DM
4.5
A
Power Dissipation
(2)
T
J
= 150°C
T
A
= 25°C
T
A
= 70°C
417
267
P
D
mW
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to +150
°C
Junction-to-Ambient Thermal Resistance
(2)
R
θ
JA
300
°C/W
Notes:
(1) Pulse width limited by maximum junction temperature.
(2) Surface mounted on a 1in
2
2oz. Cu PCB (FR-4 material)
V
DS
20V
R
DS(ON)
0.20
I
D
1.14A
Features
Advanced trench process technology
High density cell design for ultra-low on-resistance
Popular SOT-23 package
Compact and low profile
Low threshold voltage
Logic level
Fast switching
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Marking Code:
402
.016 (0.4)
)
.037(0.95).037(0.95)
m
.122 (3.1)
.110 (2.8)
.016 (0.4)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.094 (2.4)
.
.
)
.
.
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Pin Configuration
1.
Gate
2.
Source
3.
Drain
Mounting Pad Layout
New Product
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