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參數資料
| 型號： | GF2208 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 13A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直|第13A條（?。﹟蘇 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 204K |
| 代理商： | GF2208 |
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low
On-Resistance
Specially Designed for Low Voltage DC/DC
Converters
Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
±
20
V
Gate-Source Voltage
V
GS
Continuous Drain Current
T
J
= 150°C
(1)
T
A
= 25°C
T
A
= 70°C
I
D
13
10.5
±
50
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
(1)
I
DM
I
S
2.3
Maximum Power Dissipation
(1)
T
A
= 25°C
T
A
= 70°C
P
D
2.5
1.6
W
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
(1)
Thermal Resistance
T
J
, T
stg
–55 to 150
°C
R
θ
JA
50
°C/W
Notes:
(1) Surface mounted on FR4 board, t
≤
10 sec.
Mechanical Data
Case:
SO-8 molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position:
Any
Weight:
0.5g
GF2208
N-Channel Enhancement-Mode MOSFET
V
DS
30V
R
DS(ON)
8
m
I
D
13A
7/10/01
0.245 (6.22)
Min.
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
0.165 (4.19)
0.155 (3.94)
0.05 (1.27)
0.04 (1.02)
Mounting Pad Layout
5
1
4
0.244 (6.20)
0.228 (5.79)
8
0.157 (3.99)
0.150 (3.81)
0.020 (0.51)
0.013 (0.33)
0.050 (1.27)
0.009 (0.23)
0.004 (0.10)
0.197 (5.00)
0.189 (4.80)
0.069 (1.75)
0.053 (1.35)
0.019 (0.48)
°
0
°
–
8
°
0.050(1.27)
0.016 (0.41)
0.009 (0.23)
0.007 (0.18)
Dimensions in inches
and (millimeters)
SO-8
T
RENCH
G
EN
F
ET
相關PDF資料 |
PDF描述 |
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| GF2301 | TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 2.3A I(D) | SOT-23 |
| GF2303A | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2.5A I(D) | SOT-23 |
| GF2304 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 2.5A I(D) | SOT-23 |
| GF2402 | TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 1.14A I(D) | SOT-23 |
| GF2524 | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 30V V(BR)DSS | SO |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GF2208\5B | 功能描述:MOSFET USE 781-SI4860DY RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| GF-220U | 制造商:NEC TOKIN Corporation 功能描述:Electromechanical Filter Noise Filter |
| GF221N | 制造商:Siemens 功能描述: |
| GF225 | 制造商:TAITRON 制造商全稱:TAITRON Components Incorporated 功能描述:0.2A High Voltage Fast Recovery Rectifiers |
| GF230 | 制造商:TAITRON 制造商全稱:TAITRON Components Incorporated 功能描述:0.2A High Voltage Fast Recovery Rectifiers |
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