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參數資料
| 型號： | GFB75N03 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 75A條（丁）|對263AB |
| 文件頁數： | 1/4頁 |
| 文件大小： | 82K |
| 代理商： | GFB75N03 |
Maximum Ratings and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
±20
V
Gate-Source Voltage
Continuous Drain Current
(1)
V
GS
I
D
75
A
Pulsed Drain Current
I
DM
240
Maximum Power Dissipation
T
A
= 25°C
T
A
= 100°C
P
D
62.5
25
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
°C
Lead Temperature (1/8” from case for 5 sec.)
T
L
275
°C
Junction-to-Case Thermal Resistance
R
θ
JC
2.0
°C/W
Junction-to-Ambient Thermal Resistance (PCB Mounted)
R
θ
JA
62.5
°C/W
Note:
(1) Maximum DC current limited by the package
GFB75N03
N-Channel Enhancement-Mode MOSFET
V
DS
30V
R
DS(ON)
6.5m
I
D
75A
T
RENCH
G
EN
F
ET
TO-263AB
8/1/00
0.380 (9.65)
0.420 (10.67)
0.320 (8.13)
0.360 (9.14)
0.575 (14.60)
0.625 (15.88)
0.245 (6.22)
Min.
D
-T-
Seating Plate
0.027 (0.686)
0.037 (0.940)
0.095 (2.41)
0.100 (2.54)
G
D
S
PIN
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.090 (2.29)
0.110 (2.79)
0.047 (1.19)
0.055 (1.40)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Low Voltage DC/DC Converters
Fast Switching for High Efficiency
High temperature soldering in accordance with
CECC802/Reflow guaranteed
G
D
S
Mechanical Data
Case:
JEDEC TO-263 molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
Mounting Position:
Any
Weight:
1.3g
Dimensions in inches and (millimeters)
0.08
(2.032)
0.04
(1.016)
0.24
(6.096)
0.42
(10.66)
0.63
(17.02)
0.12
(3.05)
0.33
(8.38)
Mounting Pad Layout
TO-263AB
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