
GP2400ESM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/12
The GP2400ESM12 is a single switch 1200V, robust n
channel enhancement mode insulated gate bipolar
transistor (IGBT) module. Designed for low power loss, the
module is suitable for a variety of high voltage applications
in motor drives and power conversion. The high
impedance gate simplifies gate drive considerations
enabling operation directly from low power control
circuitry.
Fast switching times allow high frequency operation
making the device suitable for the latest drive designs
employing pwm and high frequency switching. The IGBT
has a wide reverse bias safe operating area (RBSOA) for
ultimate reliability in demanding applications.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise grounded
heat sinks for safety.
The powerline range of high power modules includes
dual and single switch configurations with a range of
current and voltage capabilities to match customer system
demands.
This device is optimised for traction drives and other
applications requiring high thermal cycling capability.
FEATURES
I
n - Channel Enhancement Mode
I
Non Punch Through Silicon
I
High Gate Input Impedance
I
Optimised For High Power High Frequency Operation
I
Isolated MMC Base with AlN
I
1200V Rating
I
2400A Per Module
APPLICATIONS
I
High Power Switching
I
Motor Control
I
Inverters
I
Traction Drives
KEY PARAMETERS
V
CES
V
CE(sat)
I
C
I
C(PK)
1200V
2.7V
2400A
4800A
(typ)
(max)
(max)
Fig. 1 Electrical connections - (not to scale)
Fig.2 Single switch circuit diagram
Outline type code:
E
(See package details for further information)
ORDERING INFORMATION
Order As:
GP2400ESM12
Note: When ordering, please use the whole part number.
C2
C1
Aux C
G
Aux E
E1
E2
E3
External connection
External connection
C3
GP2400ESM12
Powerline N-Channel Single Switch IGBT Module
Preliminary Information
DS5360-1.1 May 2000