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參數資料
型號: GS816218D-200
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
中文描述: 1M X 18 CACHE SRAM, 6.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁數: 15/41頁
文件大小: 980K
代理商: GS816218D-200
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GS816218(B/D)/GS816236(B/D)/GS816272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.17 11/2004
15/41
1999, GSI Technology
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
W
CR
CW
X
X
W
W
X
X
X
CR
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
相關PDF資料
PDF描述
GS816218D-200I 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816218D-225 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816218D-225I 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816218D-250 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
GS816218D-250I 1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS816218DB-150 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS816218DB-150I 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS816218DB-150IV 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS816218DB-150V 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS816218DB-200 制造商:GSI Technology 功能描述:119 BGA - Bulk
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