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參數資料
型號: GS816272CGC-30I
廠商: GSI TECHNOLOGY
英文描述: 256K x 72 18Mb S/DCD Sync Burst SRAMs
中文描述: 256 × 72 35.7的S /雙氰胺同步突發靜態存儲器
文件頁數: 10/31頁
文件大小: 678K
代理商: GS816272CGC-30I
GS816272CC-333/300/250/200/150
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 2/2005
10/31
2004, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
0.5 to 4.6
V
0.5 to 4.6
V
Voltage on I/O Pins
0.5 to V
DDQ
+0.5 (
4.6 V max.)
0.5 to V
DD
+0.5 (
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
20
mA
Output Current on Any I/O Pin
+/
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
55 to 125
o
C
T
BIAS
Temperature Under Bias
55 to 125
o
C
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關PDF資料
PDF描述
GS816272CGC-333 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS816272CGC-333I 256K x 72 18Mb S/DCD Sync Burst SRAMs
GS816272C 256K x 72 18Mb Sync Burst SRAMs
GS8170LW72C-333I 18Mb sigma 1x1Lp CMOS I/O Late Write SigmaRAM
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