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GS8640V18/32/36T-300/250/200/167

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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Rev: 1.00 9/2004

11/23

2004, GSI Technology

Simplified State Diagram with G

First Write

First Read

Burst Write

Burst Read

Deselect

Notes:

The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.

Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing

through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.

Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet

Data Input Set Up Time.

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GS8640Z18GT-167	72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z36T-300I	72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z18GT-200	72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z18GT-250	72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z18GT-300	72Mb Pipelined and Flow Through Synchronous NBT SRAM

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
GS8640V36T-167I	制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V36T-200	制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V36T-200I	制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V36T-250	制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640V36T-250I	制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs

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