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參數資料
| 型號： | GS8640V36T-167 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| 中文描述： | 2M X 36 CACHE SRAM, 8 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數： | 15/23頁 |
| 文件大小： | 452K |
| 代理商： | GS8640V36T-167 |
GS8640V18/32/36T-300/250/200/167
Product Preview
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
15/23
2004, GSI Technology
Notes:
1.
2.
I
DD
and I
DDQ
apply to any combination of V
DD
and V
DDQ
operation.
All parameters listed are worst case scenario.
Operating Currents
Parameter
Test Conditions
Mode
Symbol
-300
-250
-200
-167
Unit
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
Operating
Current
Device Selected;
All other inputs
≥
V
IH
o
r
≤
V
IL
Output
open
(x32/
x36)
Pipeline
I
DD
I
DDQ
I
DD
I
DDQ
I
DD
I
DDQ
I
DD
I
DDQ
I
SB
420
60
440
60
360
50
380
50
310
40
330
40
270
35
290
35
mA
Flow
Through
300
30
320
30
255
25
275
25
230
20
250
20
220
20
240
20
mA
(x18)
Pipeline
370
30
390
30
315
25
335
25
270
20
290
20
240
20
260
20
mA
Flow
Through
270
15
290
15
230
15
250
15
205
15
225
15
195
15
215
15
mA
Standby
Current
ZZ
≥
V
DD
– 0.2 V
—
Pipeline
100
120
100
120
100
120
100
120
mA
Flow
Through
I
SB
100
120
100
120
100
120
100
120
mA
Deselect
Current
Device Deselected;
All other inputs
≥
V
IH
or
≤
V
IL
—
Pipeline
I
DD
150
165
140
155
130
146
125
140
mA
Flow
Through
I
DD
135
150
125
140
120
135
120
135
mA
相關PDF資料 |
PDF描述 |
|---|---|
| GS8640Z18GT-167 | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z36T-300I | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z18GT-200 | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z18GT-250 | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z18GT-300 | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8640V36T-167I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640V36T-200 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640V36T-200I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640V36T-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640V36T-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
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