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參數(shù)資料
型號(hào)： GS864236GB-200V
廠(chǎng)商： GSI TECHNOLOGY
元件分類(lèi)： DRAM
英文描述： 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
中文描述： 2M X 36 CACHE SRAM, 7.5 ns, PBGA119
封裝： 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119
文件頁(yè)數(shù)： 14/35頁(yè)
文件大?。?/td> 934K
代理商： GS864236GB-200V
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage on V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to V
DD
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
Preliminary
GS864218/36/72(B/C)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 6/2006
14/35
2004, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges (1.8 V/2.5 V Version)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
V
DD1
1.7
1.8
2.0
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ1
1.7
1.8
V
DD
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
V
DD
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料
PDF描述
GS864236GB-250IV 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864236GB-250V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864272C-167IV 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864272C-167V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864272C-200IV 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS864236GB-250IV 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864236GB-250M 制造商:GSI Technology 功能描述:GS864236GB-250M - Trays
GS864236GB-250V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 72MBIT 2MX36 6.5NS/3NS 119FBGA - Trays
GS864236GB-300I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 72MBIT 2MX36 5.5NS/2.3NS 119FBGA - Trays
GS864272C-167 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 72MBIT 1MX72 8NS/3.5NS 209FBGA - Trays
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