- 您現在的位置：買賣IC網 > PDF目錄385336 > GS8662R18E-250 (GSI TECHNOLOGY) 72Mb SigmaCIO DDR-II Burst of 4 SRAM PDF資料下載
參數資料
| 型號： | GS8662R18E-250 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| 中文描述： | 4M X 18 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 MM X 17 MM, 1MM PITCH, FPBGA-165 |
| 文件頁數： | 16/37頁 |
| 文件大小： | 942K |
| 代理商： | GS8662R18E-250 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁當前第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
Description
Value
Unit
V
DD
Voltage on V
DD
Pins
–0.5 to 2.9
V
V
DDQ
Voltage in V
DDQ
Pins
–0.5 to V
DD
V
V
REF
Voltage in V
REF
Pins
–0.5 to V
DDQ
V
V
I/O
Voltage on I/O Pins
–0.5 to V
DDQ
+0.5 (
≤
2.9 V max.)
–0.5 to V
DDQ
+0.5 (
≤
2.9 V max.)
V
V
IN
Voltage on Other Input Pins
V
I
IN
Input Current on Any Pin
+/–100
mA dc
I
OUT
Output Current on Any I/O Pin
+/–100
mA dc
T
J
Maximum Junction Temperature
125
o
C
T
STG
Storage Temperature
–55 to 125
o
C
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect
reliability of this component.
Preliminary
GS8662R08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
16/37
2005, GSI Technology
Recommended Operating Conditions
Power Supplies
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
V
DD
1.7
1.8
1.9
V
I/O Supply Voltage
V
DDQ
1.7
1.8
1.9
V
Reference Voltage
V
REF
0.68
—
0.95
V
Notes:
1.
Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 1.4 V
≤
V
DDQ
≤
1.6 V (i.e., 1.5 V I/O)
and 1.7 V
≤
V
DDQ
≤
1.95 V (i.e., 1.8 V I/O) and quoted at whichever condition is worst case.
The power supplies need to be powered up simultaneously or in the following sequence: V
DD
,
V
DDQ
, V
REF
, followed by signal inputs. The
power down sequence must be the reverse. V
DDQ
must not exceed V
DD
..
2.
Operating Temperature
Parameter
Symbol
Min.
Typ.
Max.
Unit
Ambient Temperature
(Commercial Range Versions)
T
A
0
25
70
°
C
Ambient Temperature
(Industrial Range Versions)
T
A
–40
25
85
°
C
相關PDF資料 |
PDF描述 |
|---|---|
| GS8662R18E-250I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R18E-300 | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R18E-300I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R18E-333 | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R18E-333I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8662R18E-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R18E-300 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R18E-300I | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 72MBIT 4MX18 0.45NS 165FBGA - Trays |
| GS8662R18E-333 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R18E-333I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
發布緊急采購，3分鐘左右您將得到回復。