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參數資料
| 型號： | GS8662R18E-250 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| 中文描述： | 4M X 18 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 MM X 17 MM, 1MM PITCH, FPBGA-165 |
| 文件頁數： | 21/37頁 |
| 文件大小： | 942K |
| 代理商： | GS8662R18E-250 |
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Preliminary
GS8662R08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
21/37
2005, GSI Technology
Hold Times
Address Input Hold Time
t
KHAX
0.4
—
0.4
—
0.5
—
0.6
—
0.7
—
ns
Control Input Hold Time
t
KHIX
0.4
—
0.4
—
0.5
—
0.6
—
0.7
—
ns
Data Input Hold Time
Notes:
1.
All Address inputs must meet the specified setup and hold times for all latching clock edges.
2.
Control singles are R, W, BW0, BW1, and (NW0, NW1 for x8) and (BW2, BW3 for x36).
3.
If C, C are tied high, K, K become the references for C, C timing parameters
4.
To avoid bus contention, at a given voltage and temperature tCHQX1 is bigger than tCHQZ. The specs as shown do not imply bus contention because tCHQX1 is a MIN
parameter that is worst case at totally different test conditions (0
°
C, 1.9 V) than tCHQZ, which is a MAX parameter (worst case at 70
°
C, 1.7 V). It is not possible for two
SRAMs on the same board to be at such different voltages and temperatures.
5.
Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge.
6.
V
DD
slew rate must be less than 0.1 V DC per 50 ns for DLL lock retention. DLL lock time begins once V
DD
and input clock are stable.
7.
Echo clock is very tightly controlled to data valid/data hold. By design, there is a ±0.1 ns variation from echo clock to data. The datasheet parameters reflect tester guard
bands and test setup variations.
t
KHDX
0.28
—
0.3
—
0.35
—
0.4
—
0.5
—
ns
AC Electrical Characteristics (Continued)
Parameter
Symbol
-333
-300
-250
-200
-167
Units
N
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
相關PDF資料 |
PDF描述 |
|---|---|
| GS8662R18E-250I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R18E-300 | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R18E-300I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R18E-333 | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R18E-333I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8662R18E-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R18E-300 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R18E-300I | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 72MBIT 4MX18 0.45NS 165FBGA - Trays |
| GS8662R18E-333 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R18E-333I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
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