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參數(shù)資料
| 型號(hào)： | GS881Z18T-80I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 8Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| 中文描述： | 512K X 18 ZBT SRAM, 14 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁(yè)數(shù)： | 18/34頁(yè) |
| 文件大小： | 542K |
| 代理商： | GS881Z18T-80I |
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Rev: 1.10 8/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
18/34
1998, Giga Semconductor, Inc.
Preliminary
.
GS881Z18/36T-11/100/80/66
Operating Currents
Parameter
Test Conditions
Symbol
-11
-100
-80
-66
Unit
0 to
70°C
-40 to
+85°C
0 to
70°C
-40 to
+85°C
0 to
70°C
-40 to
+85°C
0 to
70°C
-40 to
+85°C
Operating
Current
Device Selected;
All other inputs
≥
V
IH
or
≤
V
IL
Output open
I
DD
Pipeline
I
DD
Flow-through
I
SB
Pipeline
I
SB
Flow-through
I
DD
Pipeline
I
DD
Flow-through
210
220
210
220
190
200
170
180
mA
150
160
150
160
130
140
130
140
mA
Standby
Current
ZZ
≥
V
DD
– 0.2 V
30
40
30
40
30
40
30
40
mA
30
40
30
40
30
40
30
40
mA
Deselect
Current
Device Deselected;
All other inputs
≥
V
IH
or
≤
V
IL
80
90
80
90
70
80
65
75
mA
65
75
65
75
55
65
55
65
mA
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