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參數資料
型號: GS88218BB-V
廠商: GSI TECHNOLOGY
英文描述: 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 為512k × 18,256K × 36 9Mb以上SCD的/雙氰胺同步突發靜態存儲器
文件頁數: 24/35頁
文件大小: 863K
代理商: GS88218BB-V
Instruction Register
ID Code Register
·
31 30 29
Boundary Scan Register
0
1
2
0
· · ·
1
2
0
Bypass Register
TDI
TDO
TMS
TCK
Test Access Port (TAP) Controller
1
·
1
0
·
·
·
·
·
·
·
·
·
Control Signals
·
GS88218/36B(B/D)-xxxV
Rev: 1.03 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
24/35
2002, GSI Technology
JTAG TAP Block Diagram
Identification (ID) Register
The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in
Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM.
It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the
controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins.
ID Register Contents
Not Used
GSI Technology
JEDEC Vendor
ID Code
P
0
1
Bit #
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
0
0 1 1 0 1 1 0 0 1
相關PDF資料
PDF描述
GS88218BGB-150IV 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-300 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-333 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-150 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
相關代理商/技術參數
參數描述
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GS88218CB-200IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays
GS88218CB-200V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays
GS88218CB-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 512KX18 5.5NS/2.5NS 119FPBGA - Trays
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