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參數(shù)資料
型號： GS88218BB-V
廠商： GSI TECHNOLOGY
英文描述： 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述： 為512k × 18，256K × 36 9Mb以上SCD的/雙氰胺同步突發(fā)靜態(tài)存儲器
文件頁數(shù)： 33/35頁
文件大小： 863K
代理商： GS88218BB-V
GS88218/36B(B/D)-xxxV
Rev: 1.03 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
33/35
2002, GSI Technology
256K x 36
GS88236BGB-150IV
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var. 2)
150/7.5
I
PQ
512K x 18
GS88218BD-250V
SCD/DCD
1.8 V or 2.5 V
165 BGA
250/5.5
C
MP
512K x 18
GS88218BD-200V
SCD/DCD
1.8 V or 2.5 V
165 BGA
200/6.5
C
MP
512K x 18
GS88218BD-150V
SCD/DCD
1.8 V or 2.5 V
165 BGA
150/7.5
C
MP
256K x 36
GS88236BD-250V
SCD/DCD
1.8 V or 2.5 V
165 BGA
250/5.5
C
MP
256K x 36
GS88236BD-200V
SCD/DCD
1.8 V or 2.5 V
165 BGA
200/6.5
C
MP
256K x 36
GS88236BD-150V
SCD/DCD
1.8 V or 2.5 V
165 BGA
150/7.5
C
MP
512K x 18
GS88218BD-250IV
SCD/DCD
1.8 V or 2.5 V
165 BGA
250/5.5
I
MP
512K x 18
GS88218BD-200IV
SCD/DCD
1.8 V or 2.5 V
165 BGA
200/6.5
I
MP
512K x 18
GS88218BD-150IV
SCD/DCD
1.8 V or 2.5 V
165 BGA
150/7.5
I
MP
256K x 36
GS88236BD-250IV
SCD/DCD
1.8 V or 2.5 V
165 BGA
250/5.5
I
MP
256K x 36
GS88236BD-200IV
SCD/DCD
1.8 V or 2.5 V
165 BGA
200/6.5
I
MP
256K x 36
GS88236BD-150IV
SCD/DCD
1.8 V or 2.5 V
165 BGA
150/7.5
I
MP
512K x 18
GS88218BGD-250V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
250/5.5
C
PQ
512K x 18
GS88218BGD-200V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 165 BGA
200/6.5
C
PQ
Ordering Information for GSI Synchronous Burst RAMs (Continued)
Org
Part Number
1
Type
Voltage
Option
Package
Speed
2
(MHz/ns)
T
A3
Status
4
Notes:
1.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example:
GS88236BB-150IVT.
The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through
mode. Each device is Pipeline/Flow Through mode-selectable by the user.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
MP = Mass Production. PQ = Pre-Qualification.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some
of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of cur-
rent offerings
2.
3.
4.
5.
相關(guān)PDF資料
PDF描述
GS88218BGB-150IV 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-300 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-333 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-150 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS88218CB-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays
GS88218CB-200I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays
GS88218CB-200IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays
GS88218CB-200V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays
GS88218CB-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 512KX18 5.5NS/2.5NS 119FPBGA - Trays
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