- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385345 > GSC9620 (Electronic Theatre Controls, Inc.) P-CHANNEL ENHANCEMENT MODE POWER MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | GSC9620 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 330K |
| 代理商： | GSC9620 |
Electrical Characteristics (Tj = 25
к
unless otherwise specified)
Parameter
Symbol
GSC9620 Page: 2/5
ISSUED DATE :2006/04/20
REVISED DATE :
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BV
DSS
-20
-
-
V
V
GS
=0, I
D
=-250uA
Breakdown Voltage Temperature Coefficient
BV
DSS
/
Tj
-
-0.037
-
V/
к
Reference to 25
к
, I
D
=-1mA
Gate Threshold Voltage
V
GS(th)
-
-
-1.0
V
V
DS
=V
GS
, I
D
=-250uA
Forward Transconductance
g
fs
-
28
-
S
V
DS
=-10V, I
D
=-9.5A
Gate-Source Leakage Current
I
GSS
-
-
±100
nA V
GS
=±8V
Drain-Source Leakage Current(Tj=25
к
)
-
-
-1
uA V
DS
=-20V, V
GS
=0
Drain-Source Leakage Current(Tj=70
к
)
I
DSS
-
-
-25
uA V
DS
=-16V, V
GS
=0
-
-
20
V
GS
=-4.5V, I
D
=-9.5A
Static Drain-Source On-Resistance
2
R
DS(ON)
-
-
35
m
V
GS
=-2.5V, I
D
=-6.0A
Total Gate Charge
2
Q
g
-
30
-
Gate-Source Charge
Q
gs
-
6
-
Gate-Drain (“Miller”) Change
Q
gd
-
3.5
-
nC
I
D
=-9.5A
V
DS
=-10V
V
GS
=-5V
Turn-on Delay Time
2
T
d(on)
-
26
-
Rise Time
T
r
-
500
-
Turn-off Delay Time
T
d(off)
-
70
-
Fall Time
T
f
-
300
-
ns
V
DS
=-10V
I
D
=-9.5A
V
GS
=-4.5V
R
G
=6
R
D
=1.05
Input Capacitance
C
iss
-
2158
-
Output Capacitance
C
oss
-
845
-
Reverse Transfer Capacitance
Source-Drain Diode
Parameter
C
rss
-
230
-
pF
V
GS
=0V
V
DS
=-15V
f=1.0MHz
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage
2
V
SD
-
-
-1.2
V
I
S
=-2.5A, V
GS
=0V, Tj=25
к
Continuous Source Current (
Body Diode
)
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width
300us, duty cycle
3. Surface mounted on 1 in
2
copper pad of FR4 board; 125
I
S
-
-
-2.08
A
V
D
=V
G
=0V, V
S
=-1.2V
2%.
/W when mo
к
unted on Min. copper pad.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GSD2004S-V-GS08 | DIODE 0.225 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Signal Diode |
| GSD2004S-V-GS18 | DIODE 0.225 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Signal Diode |
| GSD2004W-V-GS18 | DIODE 0.225 A, 300 V, SILICON, SIGNAL DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-2, Signal Diode |
| GSD2004W-V-GS08 | DIODE 0.225 A, 300 V, SILICON, SIGNAL DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-2, Signal Diode |
| GSD2004WS-V-GS18 | DIODE 0.225 A, 300 V, SILICON, SIGNAL DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-2, Signal Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GSC9685 | 制造商:GTM 制造商全稱:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC9985 | 制造商:GTM 制造商全稱:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSCA-0016-03 | 制造商:ESCABLE 功能描述: |
| GSCA-0037-01 | 制造商:ESCABLE 功能描述: |
| GSCA-0049-04 | 制造商:ESCABLE 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。