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參數(shù)資料
| 型號： | GSD2004W-V-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | DIODE 0.225 A, 300 V, SILICON, SIGNAL DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-2, Signal Diode |
| 中文描述： | Diodes (General Purpose, Power, Switching) 300 Volt 225mA 50ns |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 52K |
| 代理商： | GSD2004W-V-GS18 |
GSD2004W-V
Vishay Semiconductors
Document Number 85729
Rev. 1.6, 12-Aug-10
www.vishay.com
1
17431
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Small Signal Switching Diode, High Voltage
Features
Silicon Epitaxial Planar Diode
Fast switching diode, especially suited for
applications requiring high voltage
capability
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
Mechanical Data
Case
: SOD-123
Weight
: approx. 10.3 mg
Packaging Codes/Options
:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Continuous reverse voltage
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Typical thermal resistance
junction to ambient air
Junction temperature
Part
Ordering code
Marking
Remarks
GSD2004W-V
GSD2004W-V-GS18 or GSD2004W-V-GS08
B6
Tape and Reel
Test condition
Symbol
V
R
V
RRM
I
F
I
FRM
I
FSM
I
FSM
P
tot
Value
240
Unit
V
Peak repetitive reverse voltage
300
V
Forward current (continuous)
225
mA
Peak repetitive forward current
625
mA
Non-repetitive peak forward
current
t
p
= 1
μ
s
t
p
= 1 s
4
A
1
A
Power dissipation
350
mW
Test condition
Symbol
Value
Unit
R
thJA
357
°C/W
T
j
T
S
150
°C
Storage temperature range
- 65 to + 150
°C
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