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參數(shù)資料
| 型號(hào)： | GSD2004S-V-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | DIODE 0.225 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Signal Diode |
| 中文描述： | Diodes (General Purpose, Power, Switching) 300 Volt 225mA Dual |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 71K |
| 代理商： | GSD2004S-V-GS18 |
www.vishay.com
2
Document Number 85728
Rev. 1.5, 12-Aug-10
GSD2004S-V
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Typical thermal resistance
junction to ambient air
Junction temperature
1)
Device on Fiberglass Substrate, see layout on second page
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse breakdown voltage
1)
Device on Fiberglass Substrate, see layout
Layout for R
thJA
test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
Test condition
Symbol
Value
Unit
R
thJA
357
1)
°C/W
T
j
150
°C
Storage temperature range
T
stg
- 65 to + 150
°C
Test condition
I
R
= 100
μ
A
V
R
= 240 V
V
R
= 240 V, T
j
= 150 °C
I
F
= 20 mA
I
F
= 100 mA
V
F
= V
R
= 0, f = 1 MHz
I
F
= I
R
= 30 mA, I
rr
= 3.0 mA,
R
L
= 100
Ω
Symbol
V
BR
I
R
I
R
V
F
V
F
C
D
Min.
300
Typ.
Max.
Unit
V
Leakage current
100
nA
μ
A
V
100
Forward voltage
0.83
0.87
1.00
V
Diode capacitance
5.0
pF
Reverse recovery time
t
rr
50
ns
17451
15 (0.59)
12 (0.47)
0.
8
(0.03)
5 (0.2)
7.5 (0.3)
3 (0.12)
1 (0.4)
1 (0.4)
2 (0.
8
)
2 (0.
8
)
1.5 (0.06)
5.1 (0.2)
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