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參數資料
| 型號： | HCS245MS |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened Octal Bus Transceiver, Three-State, Non-Inverting(三態,正相,抗輻射八總線收發器) |
| 中文描述： | 輻射加固八路總線收發器，三態，非反相（三態，正相，抗輻射八總線收發器） |
| 文件頁數： | 3/7頁 |
| 文件大小： | 179K |
| 代理商： | HCS245MS |
7-477
Specifications HCS245MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
LIMITS
UNITS
MIN
MAX
Propagation Delay
Data to Output
TPLH
TPHL
VCC = 4.5V
9
2
19
ns
10, 11
2
23
ns
Enable to Output
TPZL
TPZH
VCC = 4.5V
9
2
26
ns
10, 11
2
30
ns
Disable to Output
TPLZ
TPHZ
VCC = 4.5V
9
2
28
ns
10, 11
2
33
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
Typical 45
pF
1
Typical 45
pF
Input Capacitance
CIN
VCC = Open, f = 1MHz
1
-
10
pF
1
-
10
pF
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
-
12
ns
1
-
18
ns
NOTES:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMP-
ERATURE
+25
o
C
+25
o
C
200K RAD
LIMITS
1M RAD
LIMITS
UNITS
MIN
MAX
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
-
0.75
-
3.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
6.0
-
5.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-6.0
-
-5.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD,
IOL = 50
μ
A
+25
o
C
-
0.1
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD,
IOH = -50
μ
A
+25
o
C
VCC
-0.1
-
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
+25
o
C
-
±
5
-
±
5
μ
A
Three-State Output
Leakage Current
IOZ
Applied Voltage = 0V or VCC
-
±
50
-
±
100
μ
A
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