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參數資料
| 型號： | HCTS75D |
| 廠商： | Intersil Corporation |
| 英文描述： | Quadruple Bus Buffer Gates With 3- State Outputs 14-CFP -55 to 125 |
| 中文描述： | 輻射加固雙2位雙穩態透明鎖存器 |
| 文件頁數： | 2/9頁 |
| 文件大小： | 136K |
| 代理商： | HCTS75D |
471
Specifications HCTS75MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .±
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG). . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
SBDIP Package. . . . . . . . . . . . . . . . . . . .
Ceramic Flatpack Package . . . . . . . . . . .
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.8mW/
o
C
θ
JA
θ
JC
73
o
C/W
114
o
C/W
24
o
C/W
29
o
C/W
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . 100ns/V Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
20
μ
A
2, 3
+125
o
C, -55
o
C
-
400
μ
A
Output Current
(Sink)
IOL
VCC = VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
+25
o
C
4.8
-
mA
2, 3
+125
o
C, -55
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V
1
+25
o
C
-4.8
-
mA
2, 3
+125
o
C, -55
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 5.5V, VIH = 2.75V,
VIL = 0.8V, IOL = 50
μ
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-
0.1
V
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOL = 50
μ
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 5.5V, VIH = 2.75V,
VIL = 0.8V, IOH = -50
μ
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
VCC -0.1
-
V
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOH = -50
μ
A
1, 2, 3
+25
o
C, +125
o
C,
-55
o
C
VCC -0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-0.5
+0.5
μ
A
2, 3
+125
o
C, -55
o
C
-5.0
+5.0
μ
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
7, 8A, 8B
+25
o
C, +125
o
C,
-55
o
C
-
-
V
NOTES:
1. All voltages referenced to device GND.
2. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
518625
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| HCTS75DMSR | Quadruple Bus Buffer Gates With 3- State Outputs 20-LCCC -55 to 125 |
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