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參數資料
| 型號： | HGT1N40N60A4 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 600V的，開關電源系列N溝道IGBT的與反平行Hyperfast二極管 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 152K |
| 代理商： | HGT1N40N60A4 |
2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
HGT1N40N60A4D
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage
switching device combining the best features of a MOSFET
and a bipolar transistor. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
o
C and 150
o
C. This
Formerly Developmental Type TA49349.
Features
100kHz Operation At 390V, 22A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T
J
= 125
o
C
Low Conduction Loss
Symbol
Packaging
JEDEC STYLE SOT-227B
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1N40N60A4D
SOT-227
40N60A4D
NOTE: When ordering, use the entire part number.
C
E
G
GATE
COLLECTOR
EMITTER
EMITTER
TAB
(ISOLATED)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,598,461
4,605,948
4,620,211
4,631,564
4,682,195
4,684,413
4,694,313
4,717,679
4,803,533
4,809,045
4,809,047
4,810,665
4,888,627
4,890,143
4,901,127
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
Data Sheet
December 2001
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HGT1N40N60A4D | 功能描述:IGBT 晶體管 45A 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S020N35G3VL | 制造商:Harris Corporation 功能描述: |
| HGT1S10N120BNS | 功能描述:IGBT 晶體管 35A 1200V NPT N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S10N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 17A I(C) | TO-263AB |
| HGT1S10N120BNST | 功能描述:IGBT 晶體管 N-Channel IGBT NPT Series 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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