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參數資料
型號: HGT1S15N120C3
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 35A, 1200V, UFS Series N-Channel IGBTs
中文描述: 35 A, 1200 V, N-CHANNEL IGBT, TO-262AA
文件頁數: 1/11頁
文件大?。?/td> 139K
代理商: HGT1S15N120C3
1
HGTG15N120C3, HGTP15N120C3,
HGT1S15N120C3, HGT1S15N120C3S
35A, 1200V, UFS Series N-Channel IGBTs
Features
35A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . 350ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Formerly Developmental Type TA49145.
Description
The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3
and HGT1S15N120C3S are MOS gated high voltage switching
devices combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar tran-
sistor. The much lower on-state voltage drop varies only moder-
ately between 25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential, such as: AC and DC motor controls,
power supplies and drivers for solenoids, relays and contactors.
Symbol
Packaging
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG15N120C3
TO-247
15N120C3
HGTP15N120C3
TO-220AB
15N120C3
HGT1S15N120C3
TO-262AA
15N120C3
HGT1S15N120C3S
TO-263AB
15N120C3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263 variant in tape and reel; i.e.,
HGT1S15N120C3S9A.
C
E
G
JEDEC STYLE TO-247
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-262AA
JEDEC TO-263AB
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
A
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
A
A
M
EMITTER
GATE
COLLECTOR
(FLANGE)
June 1997
File Number
4244.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
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相關代理商/技術參數
參數描述
HGT1S15N120C3S 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGT1S1N120BNDS 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S1N120BNDS9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.3A I(C) | TO-263AB
HGT1S1N120CNDS 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S1N120CNDS9A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-263AB
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