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參數資料
| 型號： | HGTG12N60A4 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 54 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 115K |
| 代理商： | HGTG12N60A4 |
1
HGTP12N60A4, HGTG12N60A4,
HGT1S12N60A4S
600V SMPS Series N-Channel IGBT
The HGTP12N60A4, HGTG12N60A4 and
HGT1S12N60A4S are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49335.
Symbol
Features
>100kHz Operation at 390V, 12A
200kHz Operation at 390V, 9A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T
J
= 125
o
C
Low Conduction Loss
Temperature Compensating SABER Model
http://www.intersil.com
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
JEDEC TO-263AB
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60A4
TO-220AB
12N60A4
HGTG12N60A4
TO-247
12N60A4
HGT1S12N60A4S
TO-263AB
12N60A4
NOTE:
9A to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60A4S9A
When ordering, use the entire part number. Add the suffix
C
E
G
G
C
E
COLLECTOR
(FLANGE)
G
COLLECTOR
(FLANGE)
E
COLLECTOR
(FLANGE)
C
E
G
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
May 1999
File Number
4656.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
相關PDF資料 |
PDF描述 |
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| HGT1S12N60B3DS | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列帶超快二極管 N溝道絕緣柵雙極型晶體管) |
| HGTG12N60B3D | 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列帶超快二極管 N溝道絕緣柵雙極型晶體管) |
| HGT1S12N60B3S | 27A, 600V, UFS Series N-Channel IGBTs(27A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| HGT1S12N60C3DS | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(24A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| HGT1S12N60C3S9A | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HGTG12N60A4D | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG12N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG12N60A4S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-247AA |
| HGTG12N60B3 | 功能描述:IGBT 晶體管 12A 600V UFS N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG12N60B3D | 制造商:Harris Corporation 功能描述: |
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