- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367210 > HMC349MS8G (美國訊泰微波有限公司上海代表處) HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz PDF資料下載
參數(shù)資料
| 型號(hào)： | HMC349MS8G |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz |
| 中文描述： | 高隔離度單刀雙擲非反射開關(guān)，直流- 4.0吉赫 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 210K |
| 代理商： | HMC349MS8G |
MICROWAVE CORPORATION
14 - 230
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
S
14
HMC349MS8G
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, DC - 4.0 GHz
v00.0304
General Description
Features
Functional Diagram
High Isolation: 70 dB @ 1 GHz
57 dB @ 2 GHz
Single Positive Control: 0/+5V
+52 dBm Input IP3
Non-Reflective Design
All Off State
Ultra Small MS8G SMT Package: 14.8 mm
2
Typical Applications
The HMC349MS8G is ideal for:
Basestation Infrastructure
MMDS & 3.5 GHz WLL
CATV/CMTS
Test Instrumentation
The HMC349MS8G is a high isolation non-
reflective DC to 4 GHz GaAs MESFET SPDT
switch in a low cost 8 lead MSOP8G surface
mount package with an exposed ground paddle.
The switch is ideal for cellular/PCS/3G basestation
applications yielding 50 to 60 dB isolation, low 0.8
dB insertion loss and +52 dBm input IP3. Power
handling is excellent up through the 3.5 GHz WLL
band with the switch offering a P1dB compression
point of +31 dBm. On-chip circuitry allows a
single positive voltage control of 0/+5 Volts at very
low DC currents. An enable input (EN) set to logic
high will put the switch in an “all off” state.
Electrical Specifications,
T
A
= +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc, 50 Ohm System
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
0.8
0.9
1.2
1.8
1.1
1.2
1.5
2.1
dB
dB
dB
dB
Isolation (RFC to RF1/RF2)
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
60
54
45
42
70
57
50
47
dB
dB
dB
dB
Return Loss (On State)
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
23
18
13
8
dB
dB
dB
dB
Return Loss (Off State)
0.5 - 2.0 GHz
0.5 - 3.0 GHz
0.5 - 4.0 GHz
20
17
14
dB
dB
dB
Input Power for 1 dB Compression
0.25 - 4.0 GHz
27
31
dBm
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
0.25 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
53
50
49
47
dBm
dBm
dBm
dBm
Switching Speed
DC - 4.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
40
120
ns
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HMC350MS8 | GaAs MMIC HIGH IP3 SINGLEBALANCED MIXER, 0.6 - 1.2 GHz |
| HMC351S8 | 600000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| HMC356LP3 | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz |
| HMC358MS8G | MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz |
| HMC361S8G | 600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HMC349MS8G_07 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz |
| HMC349MS8G_08 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz |
| HMC349MS8GE | 功能描述:IC GAAS MESFET SW SPDT 8MSOP RoHS:是 類別:RF/IF 和 RFID >> RF 開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:25,000 系列:* RF 型:通用 頻率:0Hz ~ 3GHz 特點(diǎn):SPDT 封裝/外殼:6-XFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:TSLP-7 包裝:帶卷 (TR) 其它名稱:SP000671392 |
| HMC349MS8GETR | 制造商:Hittite Microwave Corp 功能描述:IC GAAS MESFET SW SPDT 8MSOP 制造商:Hittite Microwave Corp 功能描述:HMC349 Series DC - 4.0 GHz GaAs MMIC SPDT Non Reflective CATV Switch - MSOP-8EP |
| HMC350MS8 | 制造商:HITTITE 制造商全稱:Hittite Microwave Corporation 功能描述:GaAs MMIC HIGH IP3 SINGLEBALANCED MIXER, 0.6 - 1.2 GHz |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。