- 您現在的位置：買賣IC網 > PDF目錄385414 > HY27SS16561M (Hynix Semiconductor Inc.) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash PDF資料下載
參數資料
| 型號： | HY27SS16561M |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| 中文描述： | 片256Mbit（32Mx8bit / 16Mx16bit）NAND閃存 |
| 文件頁數： | 22/44頁 |
| 文件大小： | 733K |
| 代理商： | HY27SS16561M |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁當前第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁
Rev 0.7 / Oct. 2004
22
HY27SS(08/16)561M Series
HY27US(08/16)561M Series
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Automatic Page 0 Read Description.
At powerup, once the supply voltage has reached the threshold level, V
CCth
, all digital outputs revert to their reset
state and the internal NAND device functions (reading, writing, erasing) are enabled.
The device then automatically switches to read mode where, as in any read operation, the device is busy for a time
t
BLBH1
during which data is transferred to the Page Buffer. Once the data transfer is complete the Ready/Busy signal
goes High. The data can then be read out sequentially on the I/O bus by pulsing the Read Enable, R, signal. Figures 18
and 19 show the power-up waveforms for devices featuring the Automatic Page 0 Read option.
Sequential Row Read Disabled
If the device is delivered with sequential row read disabled and Automatic Read page0 at Power-up, only the first page
(page0) will be automatically read after the power-on sequence. Refer to Figure 18.
Sequential Row Read Enabled
If the device is delivered with the Automatic Page 0 Read option only (Sequential Row Read Enabled), the device will
automatically enter Sequential Row Read mode after the power-up sequence, and start reading Page 0, Page 1, etc.,
until the last memory location is reached, each new page being accessed after a time t
BLBH1
.
The Sequential Row Read operation can be inhibited or interrupted by de-asserting CE (set to V
IH
) or by issuing a com-
mand. Refer to Figure 19.
Note: (1). V
CCth
is equal to 2.0V for 3.3V and to 1.5V for 1.8V Power Supply devices.
Data
N+1
Data
N
Last
Data
Data
N+2
tBLBH1
Busy
Vccth (1)
Vcc
ALE
CLE
I/O
RE
RB
CE
WE
Data Output
from Address N to Last Byte or Word in Page
Figure 18. Sequential Row Read Disabled and Automatic Page 0 Read at power-up
相關PDF資料 |
PDF描述 |
|---|---|
| HY27US08561M | 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27SSxxx | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27SS08121M | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27SS16121M | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27US08121M | 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY27SS561M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27SSXXX | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27UA081G1M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UA161G1M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UA1G1M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
發布緊急采購，3分鐘左右您將得到回復。