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參數資料
| 型號： | HY29F080G70 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| 中文描述： | 8兆位（1米× 8），5伏只，閃存 |
| 文件頁數： | 2/38頁 |
| 文件大小： | 366K |
| 代理商： | HY29F080G70 |
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2
Rev. 6.1/May 01
HY29F080
To eliminate bus contention, the HY29F080 has
separate chip enable (CE#), write enable (WE#)
and output enable (OE#) controls.
The device is compatible with the JEDEC single
power-supply Flash command set standard. Com-
mands are written to the command register using
standard microprocessor write timings, from where
they are routed to an internal state-machine that
controls the erase and programming circuits.
Device programming is performed a byte at a time
by executing the four-cycle Program Command.
This initiates an internal algorithm that automati-
cally times the program pulse widths and verifies
proper cell margin.
The HY29F080
’
s sector erase architecture allows
any number of array sectors to be erased and re-
programmed without affecting the data contents
of other sectors. Device erasure is initiated by
executing the Erase Command. This initiates an
internal algorithm that automatically preprograms
the array (if it is not already programmed) before
executing the erase operation. During erase
cycles, the device automatically times the erase
pulse widths and verifies proper cell margin.
To protect data in the device from accidental or
unauthorized attempts to program or erase the
device while it is in the system (e.g., by a virus),
the device has a Sector Group Protect function
which hardware write protects selected sector
groups. The sector group protect and unprotect
features can be enabled in a PROM programmer.
Temporary Sector Unprotect, which requires a high
voltage, allows in-system erasure and code
changes in previously protected sectors.
Erase Suspend enables the user to put erase on
hold for any period of time to read data from, or
program data to, any sector that is not selected
for erasure. True background erase can thus be
achieved. The device is fully erased when shipped
from the factory.
Addresses and data needed for the programming
and erase operations are internally latched during
write cycles, and the host system can detect
completion of a program or erase operation by
observing the RY/BY# pin, or by reading the DQ[7]
(Data# Polling) and DQ[6] (toggle) status bits.
Reading data from the device is similar to reading
from SRAM or EPROM devices. Hardware data
protection measures include a low V
CC
detector
that automatically inhibits write operations during
power transitions.
The host can place the device into the standby
mode. Power consumption is greatly reduced in
this mode.
BLOCK DIAGRAM
STATE
CONTROL
WE#
CE#
OE#
COMMAND
REGISTER
DQ[7:0]
V
CC
DETECTOR
TIMER
ERASE VOLTAGE
GENERATOR AND
SECTOR SWITCHES
PROGRAM
VOLTAGE
GENERATOR
A
X-DECODER
Y-DECODER
8 Mbit FLASH
MEMORY
ARRAY
(16 x 512 Kbit
Sectors)
Y-GATING
DATA LATCH
I/O BUFFERS
I/O CONTROL
DQ[7:0]
A[19:0]
ELECTRONIC
ID
V
CC
V
SS
RESET#
RY/BY#
相關PDF資料 |
PDF描述 |
|---|---|
| HY29F080G90 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080R12 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080R70 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080R90 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080T12 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY29F080G-70 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 Flash EEPROM |
| HY29F080G-70E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F080G90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080G-90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 Flash EEPROM |
| HY29F080G-90E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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