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參數(shù)資料
| 型號： | HY29F080G90 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| 中文描述： | 8兆位（1米× 8），5伏只，閃存 |
| 文件頁數(shù)： | 14/38頁 |
| 文件大小： | 366K |
| 代理商： | HY29F080G90 |
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14
Rev. 6.1/May 01
HY29F080
START
YES
Erase An
Additional Sector
Check Erase Status
(See Write Operation Status
Section)
Setup First (or Next) Sector
Address for Erase Operation
ERASE COMPLETE
Write First Five Cycles of
SECTOR ERASE
Command Sequence
Write Last Cycle (SA/0x30)
of SECTOR ERASE
Command Sequence
Sector Erase
Time-out (DQ[3])
Expired
NO
YES
NO
GO TO
ERROR RECOVERY
DQ[5] Error Exit
Normal Exit
Sectors which require erasure
but which were not specified in
this erase cycle must be erased
later using a new command
sequence
Figure 6. Sector Erase Procedure
erasure by writing the sector erase data cycle (SA/
0x30) will be interpreted as the Erase Resume
command (XXX/0x30), which will cause the Auto-
matic Erase algorithm to begin its operation. Note
that any other command during the time-out will
reset the device to the Read mode.
Once the erase operation has been suspended,
the system can read array data from or program
data to any sector not selected for erasure. Nor-
mal read and write timings and command defini-
tions apply. Reading at any address within erase-
suspended sectors produces status data on
DQ[7:0]. The host can use DQ[7], or DQ[6] and
DQ[2] together, to determine if a sector is actively
erasing or is erase-suspended. See
“
Write Op-
eration Status
”
for information on these status bits.
After an erase-suspended program operation is
complete, the host can initiate another program-
ming operation (or read operation) within non-sus-
pended sectors. The host can determine the sta-
tus of a program operation during the erase-sus-
pended state just as in the standard programming
operation.
The system must write the Erase Resume com-
mand to exit the Erase Suspend mode and con-
tinue the sector erase operation. Further writes of
the Resume command are ignored. Another Erase
Suspend command can be written after the de-
vice has resumed erasing.
The host may also write the Electronic ID com-
mand sequence when the device is in the Erase
Suspend mode. The device allows reading Elec-
tronic ID codes even if the addresses used for the
ID read cycles are within erasing sectors, since
the codes are not stored in the memory array.
When the device exits the Electronic ID mode, the
device reverts to the Erase Suspend mode, and
is ready for another valid operation. See Electronic
ID section for more information.
Electronic ID Command
The Electronic ID operation intended for use in
programming equipment has been described pre-
viously. The host processor can also be obtain
the same data by using the Electronic ID com-
mand sequence shown in Table 5. This method
does not require V
ID
on any pin. The Electronic ID
command sequence may be invoked while the
device is in the Read mode or the Erase Suspend
mode, but is invalid while the device is actively
programming or erasing.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29F080R12 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080R70 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080R90 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080T12 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080G-12 | x8 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29F080G-90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 Flash EEPROM |
| HY29F080G-90E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F080R12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080R-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 Flash EEPROM |
| HY29F080R-12E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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