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參數(shù)資料
| 型號： | HY29F080G90 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| 中文描述： | 8兆位（1米× 8），5伏只，閃存 |
| 文件頁數(shù)： | 8/38頁 |
| 文件大?。?/td> | 366K |
| 代理商： | HY29F080G90 |
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8
Rev. 6.1/May 01
HY29F080
The flow chart in Figure 1 illustrates the proce-
dure for protecting sector groups, and timing speci-
fications and waveforms are shown in the specifi-
cations section of this document. Verification of
protection is accomplished as described in the
Electronic ID Mode section and shown in the flow
chart.
The procedure for sector group unprotection is il-
lustrated in the flow chart in Figure 2, and timing
specifications and waveforms are given at the end
of this document.
Note that to unprotect any sec-
tor group, all unprotected sector groups must first
be protected prior to the first unprotect write cycle.
Sectors can also be
temporarily
unprotected as
described in the next section.
Temporary Sector Group Unprotect Operation
This feature allows temporary unprotection of pre-
viously protected sectors to allow changing the
data in-system. Temporary Sector Group Unpro-
tect mode is activated by setting the RESET# pin
to V
ID
. While in this mode, formerly protected sec-
tors can be programmed or erased by invoking
START
Set TRYCNT = 1
Set A9 = OE# = V
ID
Set Address:
A[19:17] = Group to Protect
CE# = V
IL
RESET# = V
IH
WE# = V
IL
Wait t
WPP1
A9 = V
A[19:17] = Group to Protect
OE# = CE# = A6 = A0 = V
A1 = V
IH
IL
Read Data
Data = 0x01
Protect Another
Sector
YES
TRYCNT = 25
NO
Increment TRYCNT
NO
YES
DEVICE FAILURE
YES
NO
Remove V
ID
from A9
SECTOR PROTECT
COMPLETE
APPLY V
CC
WE# = V
IH
Figure 1. Sector Group Protect Procedure
the appropriate commands (see Device Com-
mands section). Once V
ID
is removed from RE-
SET#, all the previously protected sectors are pro-
tected again. Figure 3 illustrates the algorithm.
Electronic ID Mode Operation
The Electronic ID mode provides manufacturer and
device identification and sector group protection
verification through identifier codes output on
DQ[7:0]. This mode is intended primarily for pro-
gramming equipment to automatically match a
device to be programmed with its corresponding
programming algorithm. The Electronic ID infor-
mation can also be obtained by the host through
a command sequence, as described in the De-
vice Commands section.
Operation in the Electronic ID mode requires V
ID
on address pin A[9], with additional requirements
for obtaining specific data items as listed in Table
2:
A read cycle at address 0xXXX00 retrieves the
manufacturer code (Hynix = 0xAD).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29F080R12 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080R70 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080R90 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080T12 | 8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080G-12 | x8 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29F080G-90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 Flash EEPROM |
| HY29F080G-90E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| HY29F080R12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1M x 8), 5 Volt-only, Flash Memory |
| HY29F080R-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 Flash EEPROM |
| HY29F080R-12E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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