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參數資料
| 型號： | IHW15N120R2 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Reverse Conducting IGBT with monolithic body diode |
| 中文描述： | 反向開展與IGBT的單片體二極管 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 364K |
| 代理商： | IHW15N120R2 |
IHW15N120R2
Soft Switching Series
Power Semiconductors
1
Rev. 1.2 May 06
Reverse Conducting IGBT with monolithic body diode
Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Low EMI
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
T
j,max
Marking
Package
IHW15N120R2
1200V
15A
1.5V
175
°
C
H15R1202
PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (
V
CE
≤
1200V,
T
j
≤
175
°
C)
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Diode surge non repetitive current,
t
p
limited by
T
jmax
T
C
= 25
°
C,
t
p
= 10ms, sine halfwave
T
C
= 25
°
C,
t
p
≤
2.5μs, sine halfwave
T
C
= 100
°
C,
t
p
≤
2.5μs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (
t
p
< 5 ms)
V
CE
I
C
1200
30
15
V
A
I
Cpuls
-
45
45
I
F
30
15
I
Fpuls
I
FSM
45
50
130
120
V
GE
±
20
±
25
357
V
Power dissipation
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Mounting Torque
P
tot
T
j
T
stg
-
M
s
W
-40...+175
-55...+175
260
0.6
°
C
Nm
1
J-STD-020 and JESD-022
G
C
E
PG-TO-247-3-21
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IHW15N120R2XK | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 |
| IHW15N120R3 | 功能描述:IGBT 晶體管 IH SeriesRev Conduct IGBT Monolithic Body RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IHW15N120R3FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 30A 254W TO247-3 |
| IHW15T120 | 功能描述:IGBT 晶體管 LOW LOSS DuoPack 1200V 15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IHW15T120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 30A 113W TO247-3 |
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